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參數(shù)資料
| 型號： | NIS6111 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | BERS IC (Better Efficiency Rectifier System) Ultra Efficient, High Speed Diode(BERS IC，高效，高速二極管) |
| 中文描述： | 別爾斯集成電路（更好的效率整流系統(tǒng)）超高效，高速二極管（別爾斯集成電路，高效，高速二極管） |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 145K |
| 代理商： | NIS6111 |
NIS6111
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C, Reg In = 8.0 V, unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
SYNCHRONOUS RECTIFIER
ON STATE
Conduction Mode ON Resistance
(I = 10 Adc, V
GS
= 5.0 V)
(I = 20 Adc, V
GS
= 5.0 V)
R
ON
3.7
4.7
4.5
m
OFF STATE
Reverse Leakage Current (V
R
= 24 VDC)
I
DSS
10
A
Reverse Leakage Current (V
R
= 24 VDC, T
J
= 125
°
C)
I
DSS
100
A
SWITCHING
(See Figures 1 and 3) (Note 2)
FET Turn
on Time (I
max
= 3.0 A, I rev = 1.0 A, V
rev
= 5.0 V)
t
sat
45
ns
Turnoff Propagation
Delay Time (Vds = V
offset
to I
D
= 0)
t
pd
35
ns
BODY DIODE
Forward On
Voltage (Notes 1 and 3)
I = 10 Adc, V
GS
= 0 V
I = 20 Adc, V
GS
= 0 V
V
SD
0.75
0.8
1.2
Vdc
POWER SUPPLY (V
R
= 20 V, T
J
= 25 C)
Supply Voltage (Pin 2 to Pin 1), Internal Bias Voltage
V
CC
4.8
5.0
5.2
V
Cap Charge Time
(0.5 V Initial Charge, 5.0 V @ Reg In, to 4.5 V, C = 0.22 F)
T
J
=
40
°
C to 125
°
C
t
chg
t
chg
2.0
3.7
4.7
5.0
s
s
Headroom (for V
cap
= 4.7 V)
V
hd
1.0
1.27
1.5
V
Minimum Duty Cycle for Operation (Freq = 100 kHz) (Note 5)
d
min
2.0
%
Delay Time (T
amb
= 20
°
C)
T
d
51
ns
Reg In Voltage (Pin 5 to Pin 1)
Minimum Voltage Required for Operation (V
UVLO
+ V
hd
)
4.8
V
Minimum Voltage Required for Full Gate Drive (V
CC
+ V
hd
)
6.3
V
CONTROL CIRCUIT
Bias Supply Current (V
BIAS
= 5.0 V)
I
BIAS
0.8
1.3
1.8
mA
Input Offset Voltage
I
OS
2.0
5.0
mV
Shutdown Voltage (UVLO)
V
UVLO
3.35
3.55
3.65
V
Turn
on Voltage (UVLO)
V
TO
3.65
3.81
3.95
V
1. Pulse width
2. Pulse width 2.0 s, duty cycle
3. Switching characteristics are independent of operating junction temperature.
4. Based on 0.062
″
FR4 board, double
sided 1 oz copper.
5. Minimum time required to recharge internal capacitor.
300 s, duty cycle
2%.
5%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NIS6111_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:BERS IC (Better Efficiency Rectifier System) |
| NIS6111EVB | 功能描述:電源管理IC開發(fā)工具 EVAL BOARD RoHS:否 制造商:Maxim Integrated 產(chǎn)品:Evaluation Kits 類型:Battery Management 工具用于評估:MAX17710GB 輸入電壓: 輸出電壓:1.8 V |
| NIS6111QPT1 | 功能描述:馬達/運動/點火控制器和驅(qū)動器 24V 30A High Speed RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Stepper Motor Controllers / Drivers 類型:2 Phase Stepper Motor Driver 工作電源電壓:8 V to 45 V 電源電流:0.5 mA 工作溫度:- 25 C to + 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:HTSSOP-28 封裝:Tube |
| NIS6111QPT1G | 功能描述:馬達/運動/點火控制器和驅(qū)動器 24V 30A High Speed Ultra Eff. Diode RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Stepper Motor Controllers / Drivers 類型:2 Phase Stepper Motor Driver 工作電源電壓:8 V to 45 V 電源電流:0.5 mA 工作溫度:- 25 C to + 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:HTSSOP-28 封裝:Tube |
| NIS6201 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Floating, Regulated Charge Pump |
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