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參數(shù)資料
| 型號： | NIS5102QP2HT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 電源管理 |
| 英文描述： | High Side SMART HotPlug IC/Inrush Limiter/Circuit Breaker |
| 中文描述： | 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, DSO12 |
| 封裝： | 9 X 9 MM, PLLP-12 |
| 文件頁數(shù)： | 3/14頁 |
| 文件大小： | 150K |
| 代理商： | NIS5102QP2HT1 |
NIS5102
http://onsemi.com
3
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Input Voltage, Operating, SteadyState (Input + to Input )
V
in
0.3 to 18
V
Input Voltage, Operating, Transient (Input + to Input ), 1 second
V
in
0.3 to 25
V
Drain Voltage, Operating, SteadyState (Drain to Input )
V
DD
0.3 to 18
V
Drain Voltage, Operating, Transient (Drain to Input ), 1 second
V
DD
0.3 to 25
V
Drain Current, Peak
I
Dpk
20
A
Continuous Current (T
A
= 25
°
C, 0.5 in
2
pad)
I
Davg
10
A
Voltage on Power Good Pin (Pin 7)
V
max7
20
V
Thermal Resistance, JunctiontoAir
0.5 in
2
Copper
1 in
2
Copper
Q
JA
76.5
41.2
°
C/W
°
C/W
Thermal Resistance, JunctiontoLead
Q
JL
3.2
°
C/W
Power Dissipation (T
A
= 25
°
C, 0.5 in
2
pad)
P
max
1.4
W
Operating Temperature Range (Note 1)
T
J
40 to 175
°
C
NonOperating Temperature Range
T
J
55 to 175
°
C
Lead Temperature, Soldering (10 Sec)
T
L
235
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Actual maximum junction temperature is limited by an internal protection circuit and will not reach the absolute maximum temperature as
specified.
ELECTRICAL CHARACTERISTICS
(V
CC
= 12 V, R
LIMIT
= 36 , C
Charge
= 100 pF, T
J
= 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
POWER FET
Delay Time (Enable High to I
S
= 100 mA)
T
dly
2.0
ms
Charging Time (I
S
= 100 mA to I
S
= 5.0 A, R
LIMIT
= 36 )
t
chg
1.0
ms
ON Resistance (V
CC
= 12 V, I
S
= 5.0 A) (Note 2)
R
DSon
10
13
m
Zero Gate Voltage Drain Current
(V
DS
= 12 V
dc
, V
GS
= 0 V
dc
)
I
DSS1
10
A
Zero Gate Voltage Drain Current
(V
DS
= 18 V
dc
, V
GS
= 0 V
dc
)
I
DSS2
100
A
Output Capacitance (V
DS
= 12 V
dc
, V
GS
= 0 V
dc
, f = 10 kHz)
pF
THERMAL LIMIT
Shutdown Temperature (Note 3)
T
SD
125
135
145
°
C
Hysteresis (Note 3)
T
hyst
40
°
C
OVER/UNDERVOLTAGE
UVLO Turnon (Input + Increasing, Rext
UVLO
= 620 k)
V
on
10.05
11.15
12.30
V
UVLO Hysteresis (Input + Decreasing, Rext
UVLO
= 620 k)
V
hyst
0.45
0.62
0.75
V
OVLO Turnoff (Input + Increasing, Rext
UVLO
= 620 k)
V
off
14.0
16.4
19.0
V
OVLO Hysteresis (Input + Decreasing, Rext
UVLO
= 620 k)
V
hyst
0.6
0.78
1.0
V
PARALLEL SHUTDOWN
(Alternate Function on OVLO Pin)
Device Fanout (Minimum External Resistor Value = 2.0 k (Note 3)
N
fan
4.0
Devices
Shutdown Voltage Threshold (OVLO Pin)
V
SD
0.6
0.8
V
Shutdown State Output Voltage (Isink = 2.0 mA)
V
low
0.3
0.4
V
2. Pulse Test: Pulse width 300 s, duty cycle 2%.
3. Verified by design.
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| NIS5102QP2HT1G | 功能描述:熱插拔功率分布 MI HI SDE SMRT HOTPLUG RoHS:否 制造商:Texas Instruments 產(chǎn)品:Controllers & Switches 電流限制: 電源電壓-最大:7 V 電源電壓-最小:- 0.3 V 工作溫度范圍: 功率耗散: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MSOP-8 封裝:Tube |
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| NIS5112D1R2G | 功能描述:熱插拔功率分布 Electronic Fuse RoHS:否 制造商:Texas Instruments 產(chǎn)品:Controllers & Switches 電流限制: 電源電壓-最大:7 V 電源電壓-最小:- 0.3 V 工作溫度范圍: 功率耗散: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MSOP-8 封裝:Tube |
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