- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363256 > NID9N05CLT4 (ON SEMICONDUCTOR) Power MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | NID9N05CLT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET |
| 中文描述： | 9 A, 52 V, 0.181 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369C, DPAK-3 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 69K |
| 代理商： | NID9N05CLT4 |
Semiconductor Components Industries, LLC, 2004
July, 2004 Rev. 5
1
Publication Order Number:
NID9N05CL/D
NID9N05CL
Power MOSFET
9.0 A, 52 V, NChannel, Logic Level,
Clamped MOSFET w/ ESD Protection
in a DPAK Package
Benefits
High Energy Capability for Inductive Loads
Low Switching Noise Generation
Features
Diode Clamp Between Gate and Source
ESD Protection HBM 5000 V
Active OverVoltage Gate to Drain Clamp
Scalable to Lower or Higher R
DS(on)
Internal Series Gate Resistance
Applications
Automotive and Industrial Markets:
Solenoid Drivers, Lamp Drivers, Small Motor Drivers
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage Internally Clamped
V
DSS
5259
V
GatetoSource Voltage Continuous
V
GS
±
15
V
Drain Current Continuous @ T
= 25
°
C
Drain Current
Single Pulse (t
p
= 10 s)
I
D
I
DM
9.0
35
A
Total Power Dissipation @ T
A
= 25
°
C
P
D
28.8
W
Operating and Storage Temperature Range
T
J
, T
stg
55 to
175
°
C
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 125
°
C
(V
DD
= 50 V, I
D(pk)
= 1.5 A, V
GS
= 10 V,
R
G
= 25 )
E
AS
160
mJ
Thermal Resistance JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
R
JC
R
JA
R
JA
5.2
72
100
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from Case for 10 s
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 1
″
pad size, (Cu area 1.127 in
2
)
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu area 0.412 in
2
)
Device
Package
Shipping
ORDERING INFORMATION
NID9N05CLT4
DPAK
2500/Tape & Reel
DPAK
CASE 369C
STYLE 2
M
PWR
Drain
(Pins 2, 4)
Source
(Pin 3)
Gate
(Pin 1)
MARKING
DIAGRAM
D9N05CL
A
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
R
G
Overvoltage
Protection
ESD Protection
http://onsemi.com
1
2
3
4
= Gate
= Drain
= Source
= Drain
1
2
3
4
NID9N05CL
DPAK
75 Units/Rail
AYWW
D9N05CL
V
DSS
(Clamped)
R
DS(ON)
TYP
I
D
MAX
(Limited)
52 V
90 m
9.0 A
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NIF5002NT1G | Self−Protected FET with Temperature and Current Limit |
| NIF5002NT3G | Self−Protected FET with Temperature and Current Limit |
| NIF5002N | Self-Protected FET with Temperature and Current Limit |
| NIF5002ND | Self-Protected FET with Temperature and Current Limit |
| NIF5002NT1 | Self-Protected FET with Temperature and Current Limit |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NID9N05CLT4G | 功能描述:MOSFET 52V 9A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NIDAQCARD-6533 | 制造商:NI 制造商全稱:National Instruments Corporation 功能描述:High-Speed 32-bit Digital Pattern I/O and Handshaking |
| NIDAQCARD-6715 | 制造商:NI 制造商全稱:National Instruments Corporation 功能描述:High-Speed Voltage Output - up to 1 MS/s/Channel,up to 16 Bits, up to 32 Channels |
| NI-DAQMX | 制造商:NI 制造商全稱:National Instruments Corporation 功能描述:Data Acquisition and Signal Conditioning Driver Software Options |
| NIDAQPAD-6015 | 制造商:NI 制造商全稱:National Instruments Corporation 功能描述:Portable High-Performance Multifunction DAQ for USB |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。