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參數(shù)資料
| 型號： | NID5001NT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Self-protected FET with Temperature and Current Limit |
| 中文描述： | 42 V, 0.034 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 53K |
| 代理商： | NID5001NT4 |
Semiconductor Components Industries, LLC, 2004
January, 2004 Rev. 6
1
Publication Order Number:
NID5001N/D
NID5001N
Preferred Device
Selfprotected FET
with Temperature and
Current Limit
HDPlus devices are an advanced series of power MOSFETs which
utilize ON Semicondutor’s latest MOSFET technology process to
achieve the lowest possible onresistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated DraintoGate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
GatetoSource Clamp.
Features
Low R
DS(on)
Current Limitation
Thermal Shutdown with Automatic Restart
Short Circuit Protection
I
DSS
Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
MOSFET MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage Internally
Clamped
V
DSS
42
Vdc
DraintoGate Voltage Internally Clamped
(R
GS
= 1.0 M )
V
DGR
42
Vdc
GatetoSource Voltage
V
GS
14
Vdc
Drain Current
Continuous
I
D
Internally Limited
Total Power Dissipation
@ T
A
= 25
°
C (Note 1)
@ T
A
= 25
°
C (Note 1)
@ T
A
= 25
°
C (Note 2)
P
D
64
1.0
1.56
W
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
R
JC
R
JA
R
JA
1.95
120
80
°
C/W
Single Pulse DraintoSource Avalanche
Energy
(V
= 25 Vdc, V
= 5.0 Vdc,
I
L
= 4.5 Apk, L = 120 mH, R
G
= 25 )
E
AS
1215
mJ
Operating and Storage Temperature
Range
T
J
, T
stg
55 to
150
°
C
1. Minimum FR4 PCB, steady state.
2. Mounted onto a 2
″
square FR4 board (1
″
square, 2 oz. Cu 0.06
″
thick
singlesided, t = steady state).
Device
Package
Shipping
ORDERING INFORMATION
NID5001NT4
DPAK
2500/Tape & Reel
DPAK
CASE 369C
STYLE 2
M
PWR
Drain
Source
Temperature
Limit
Gate
Input
MARKING
DIAGRAM
NID5001N
Y
WW
= Device Code
= Year
= Work Week
Current
Limit
Current
Sense
R
G
Overvoltage
Protection
ESD Protection
http://onsemi.com
Preferred
devices are recommended choices for future use
and best overall value.
YWW
NID
5001N
*Max current may be limited below this value
depending on input conditions.
X
1
2
3
= Gate
= Drain
= Source
1
2
3
V
DSS
(Clamped)
R
DS(ON)
TYP
I
D
MAX
(Limited)
42 V
23 m
@ 10 V
33 A*
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
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| NID5001NT4G | 功能描述:MOSFET 42V 33A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NID5003N | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Self−Protected FET with Temperature and Current Limit |
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| NID5003NT4 | 功能描述:MOSFET 42V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NID5003NT4G | 功能描述:MOSFET 42V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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