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參數(shù)資料
| 型號： | NGD8205NT4G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK |
| 中文描述： | 20 A, 390 V, N-CHANNEL IGBT |
| 封裝： | LEAD FREE, CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 147K |
| 代理商： | NGD8205NT4G |
Semiconductor Components Industries, LLC, 2006
August, 2006
Rev. 7
1
Publication Order Number:
NGD8205N/D
NGD8205N
Ignition IGBT
20 Amp, 350 Volt, N
Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
Ideal for Coil
on
Plug and Driver
on
Coil Applications
DPAK Package Offers Smaller Footprint for Increased Board Space
Gate
Emitter ESD Protection
Temperature Compensated Gate
Collector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (R
G
) and Gate
Emitter Resistor (R
GE
)
Pb
Free Package is Available
Applications
Ignition Systems
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector
Emitter Voltage
V
CES
390
V
Collector
Gate Voltage
V
CER
390
V
Gate
Emitter Voltage
V
GE
15
V
Collector Current
Continuous
@ T
C
= 25
°
C
Pulsed
I
C
20
50
A
DC
A
AC
Continuous Gate Current
I
G
1.0
mA
Transient Gate Current (t
≤
2 ms, f
≤
100 Hz)
I
G
20
mA
ESD (Charged
Device Model)
ESD
2.0
kV
ESD (Human Body Model)
R = 1500 , C = 100 pF
ESD
8.0
kV
ESD (Machine Model) R = 0 , C = 200 pF
ESD
500
V
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
125
0.83
W
W/
°
C
Operating & Storage Temperature Range
T
J
, T
stg
55 to +175
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
20 A, 350 V
V
CE(on)
= 1.3 V @
I
C
= 10 A, V
GE
4.5 V
C
E
G
DPAK
CASE 369C
STYLE 7
Device
Package
Shipping
ORDERING INFORMATION
NGD8205NT4
DPAK
2500 / Tape & Reel
MARKING DIAGRAM
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
Y
WW
NGD8205N = Device Code
G
= Pb
Free Package
= Year
= Work Week
R
G
R
GE
http://onsemi.com
NGD8205NT4G
DPAK
(Pb
Free)
2500 / Tape & Reel
YWW
NGD
8205NG
1
G
E
C
C
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