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參數(shù)資料
| 型號： | NGB18N40CLBT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 18 Amps, 400 Volts N−Channel D2PAK |
| 中文描述： | 18 A, 430 V, N-CHANNEL IGBT |
| 封裝： | CASE 418B-04, D2PAK-3 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 135K |
| 代理商： | NGB18N40CLBT4 |
Semiconductor Components Industries, LLC, 2005
March, 2005
Rev. 1
1
Publication Order Number:
NGB18N40CLB/D
NGB18N40CLBT4
Ignition IGBT
18 Amps, 400 Volts
N
Channel D
2
PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over
Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Ideal for Coil
on
Plug Applications
Gate
Emitter ESD Protection
Temperature Compensated Gate
Collector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Integrated Gate
Emitter Resistor (R
GE
)
Emitter Ballasting for Short
Circuit Capability
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector
Emitter Voltage
V
CES
430
V
DC
Collector
Gate Voltage
V
CER
430
V
DC
Gate
Emitter Voltage
V
GE
18
V
DC
Collector Current
Continuous
@ T
C
= 25
°
C
Pulsed
I
C
18
50
A
DC
A
AC
ESD (Human Body Model)
R = 1500 , C = 100 pF
ESD
8.0
kV
ESD (Machine Model) R = 0 , C = 200 pF
ESD
800
V
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
115
0.77
Watts
W/
°
C
Operating and Storage Temperature Range
T
J
, T
stg
55 to
+175
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
18 AMPS
400 VOLTS
V
CE(on)
2.0 V @
I
C
= 10 A, V
GE
4.5 V
C
E
G
D
2
PAK
CASE 418B
STYLE 4
Device
Package
Shipping
ORDERING INFORMATION
NGB18N40CLBT4
D
2
PAK
800/Tape & Reel
MARKING
DIAGRAM
4
Collector
GB
18N40B
YWW
1
Gate
3
Emitter
2
Collector
GB18N40B= NGB18N40CLB
Y
= Year
WW
= Work Week
http://onsemi.com
R
GE
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
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|---|---|
| NGB18N40CLBT4/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Ignition IGBT in D2ak (Gen3) with Improved SCIS Energy and Vce(on) |
| NGB18N40CLBT4_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 18 Amps, 400 Volts |
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| NGB2215 | 制造商:NIC Components Corp 功能描述: |
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