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EDS-101103 Rev C
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The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
Preliminary
Product Description
NGA-386
DC-5000 MHz, Cascadable GaAs
HBT MMIC Amplifier
Product Features
High Gain: 18.9dB at 1950Mhz
Cascadable 50 ohm: 1.2:1 VSWR
Patented GaAs HBT Technology
Operates from Single Supply
Low Thermal Resistance Package
Unconditionally Stable
Applications
Cellular, PCS, CDPD
Wireless Data, SONET
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1
Stanford Microdevices’ NGA-386 is a high performance
Gallium Arsenide Heterojunction Bipolar Transistor MMIC
Amplifier. Designed with InGaP process technology for
improved reliability, a Darlington configuration is utilized for
broadband performance up to 5 Ghz. The heterojunction
increases breakdown voltage and minimizes leakage current
between junctions. Cancellation of emitter junction
non-linearities results in higher suppression of intermodulation
products.
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dB
Small Signal Gain vs. Frequency
Frequency GHz