參數(shù)資料
型號(hào): NEZ3642-15D
廠商: NEC Corp.
英文描述: 20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor
中文描述: 15瓦C波段砷化鎵場(chǎng)效應(yīng)管N溝道砷化鎵場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 2/12頁(yè)
文件大?。?/td> 69K
代理商: NEZ3642-15D
15 W C-BAND Po GaAs FET NEZ SERIES
2
NEZ-15D/15DD
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
V
DS
15
V
Gate to Source Voltage
V
GS
–12
V
Gate to Drain Voltage
V
GD
–18
V
Drain Current
I
D
18
A
Gate Current
I
G
100
mA
Total Power Dissipation
P
T
*
100
W
Channel Temperature
T
ch
175
C
Storage Temperature
T
stg
–65 to +175
C
*
T
C
= 25 C
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
Part No.
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Saturated Drain Current
I
DSS
NEZ-15D
NEZ-15DD
4.0
9.2
14.0
A
V
DS
= 2.5 V, V
GS
= 0 V
Pinch-off Voltage
V
P
NEZ-15D
NEZ-15DD
–3.5
–2.2
–0.5
V
V
DS
= 2.5 V, I
DS
= 60 mA
Trans-Conductance
gm
NEZ-15D
NEZ-15DD
5200
mS
V
DS
= 2.5 V, I
DS
= 4 A
Gate to Drain Voltage
B
VGDO
NEZ-15D
NEZ-15DD
20
22
V
I
GD
= 60 mA
Thermal Resistance
R
th
NEZ-15D
NEZ15DD
1.3
1.5
C/W
Channel to Case
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