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參數(shù)資料
| 型號(hào)： | NEZ1414-8E |
| 廠商： | NEC Corp. |
| 英文描述： | 8W X, Ku-BAND POWER GaAs MESFET |
| 中文描述： | 8瓦特十，KU波段功率GaAs MESFET |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大小： | 82K |
| 代理商： | NEZ1414-8E |
The information in this document is subject to change without notice.
N-CHANNEL GaAs MESFET
NEZ1011-8E, NEZ1414-8E
8W X, Ku-BAND POWER GaAs MESFET
1998
Document No. P13730EJ1V0DS00 (1st edition)
Date Published September 1998 N CP(K)
Printed in Japan
DATA SHEET
DESCRIPTION
The NEZ1011-8E and NEZ1414-8E are power GaAs MESFETs which provide high gain, high efficiency and high
output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
only a 50
external circuit. To reduce thermal resistance the device has a PHS (Plated Heat Sink) structure. The
device incorporates a WSi (tungsten silicide) gate structure for high reliability.
FEATURES
High Output Power : P
o (1 dB)
= +39.5 dBm typ.
High Linear Gain
: 6.5 dB typ.
High Efficiency
: 25 % typ.
Input and Output Internally Matched for Optimum performance
ORDERING INFORMATION
Part Number
Package
NEZ1011-8E
NEZ1414-8E
T-61
Remark
To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NEZ1011-8E, NEZ1414-8E)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
V
DS
15
V
Gate to Source Voltage
V
GS
–7
V
Drain Current
I
DS
10
A
Gate Forward Current
I
GF
+80
mA
Gate Reverse Current
I
GR
–80
mA
Total Power Dissipation
P
T
60
W
Channel Temperature
T
ch
175
°C
Storage Temperature
T
stg
–65 to +175
°C
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
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| NEZ-15B | 制造商:NEC 制造商全稱:NEC 功能描述:C-BAND POWER GAAS MESFET |
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| NEZ3642-4D | 制造商:NEC 制造商全稱:NEC 功能描述:4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
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