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參數(shù)資料
| 型號(hào)： | NESG2101M05 |
| 廠商： | NEC Corp. |
| 英文描述： | NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR |
| 中文描述： | 鄰舍npn型硅鍺高頻陳德良SIS的職權(quán)范圍 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 83K |
| 代理商： | NESG2101M05 |
NESG2101M16
NEC's NPN SiGe
HIGH FREQUENCY TRAN SIS TOR
DESCRIPTION
NEC's NESG2101M16 is fabricated using NECs high voltage
Silicon Germanium process (UHS2-HV), and is designed for
a wide range of applications including low noise ampli
fi
ers,
medium power ampli
fi
ers, and oscillators
California Eastern Laboratories
HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
V
CEO
= 5 V (Absolute Maximum)
HIGH OUTPUT POWER:
P
1dB
= 21 dBm at 2 GHz
LOW NOISE FIGURE:
NF
= 0.9 dB at 2 GHz
NF
= 0.6 dB at 1 GHz
HIGH MAXIMUM STABLE POWER GAIN:
MSG
= 17 dB at 2 GHz
LOW PROFILE M16 PACKAGE:
6-pin lead-less minimold
FEATURES
PART NUMBER NESG2101M16
PACKAGE OUTLINE M16
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX
P
1dB
Output Power at 1 dB Compression Point dBm 21
V
CE
= 3.6 V, I
CQ
= 10 mA, f = 2 GHz, Z
S
= Z
SOPT
, ZL = Z
LOPT
G
L
Linear Gain, V
CE
= 3.6 V, I
CQ
= 10 mA, f = 2 GHz, dB 15
NF Noise Figure at V
CE
= 2 V, I
C
= 10 mA, f = 2 GHz, dB 0.9 1.2
Z
S
= Z
SOPT
, ZL = Z
LOPT
G
a
Associated Gain at V
CE
= 2 V, I
C
= 10 mA, f = 2 GHz, dB 11.0 13.0
Z
S
= Z
SOPT
, ZL = Z
LOPT
R
CE
= 2 V, I
C
= 7mA, f = 1 GHz, dB 0.6
Z
S
= Z
SOPT
, ZL = Z
LOPT
G
a
Associated Gain at V
CE
= 2 V, I
C
= 7 mA, f = 1 GHz, dB 19.0
Z
S
= Z
SOPT
, ZL = Z
LOPT
MSG Maximum Stable Gain
1
at V
CE
= 3 V, I
C
= 50 mA, f = 2 GHz dB 14.5 17.0
|S
21E
|
2
Insertion Power Gain at V
CE
= 3 V, I
C
= 50 mA, f = 2 GHz dB 11.5 13.5
f
T
Gain Bandwidth Product at V
CE
= 3 V, I
C
= 50 mA, f = 2 GHz GHz 14 17
C
re
Reverse Transfer Capacitance
2
at V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz pF 0.4 0.5
I
CBO
Collector Cutoff Current at V
CB
= 5V, I
E
= 0 nA 100
D
EBO
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0 nA 100
h
FE
DC Current Gain
3
at V
CE
= 2 V, I
C
= 15 mA 130 190 260
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
S
21
S
12
Notes:
1. MSG =
2. Collector to base capacitance when the emitter pin is grounded.
3. Pulsed measurement, pulse width
≤
350
μ
s, duty cycle
≤
2 %.
PRELIMINARY DATA SHEET
M16
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| NESG210719 | NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION |
| NESG210719-T1 | NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION |
| NESG260234 | 3-PIN POWER MINIMOLD |
| NESG260234-T1 | 3-PIN POWER MINIMOLD |
| NESG3031M14 | NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NESG2101M05-A | 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| NESG2101M05-EVPW24 | 功能描述:射頻硅鍺晶體管 For NESG2101M05-A Power at 2.4 GHz RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| NESG2101M05-EVPW24-A | 功能描述:射頻硅鍺晶體管 Silicon Germanium Amp. and Oscillator RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| NESG2101M05-T1 | 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| NESG2101M05-T1A | 制造商:Renesas Electronics Corporation 功能描述:RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT |
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