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參數(shù)資料
| 型號： | NESG2046M33 |
| 廠商： | NEC Corp. |
| 英文描述： | NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION |
| 中文描述： | 鄰舍npn型硅鍺晶體管低噪聲，高增益放大 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 118K |
| 代理商： | NESG2046M33 |
NESG2046M33
ELECTRICAL CHARACTERISTICS
(T
A
=+25oC)
Notes 1.
Pulse measurement: PW
≤
350
μ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
h
FE
CLASSIFICATION
RANK
FB
Marking
T7
h
FE
Value
140 to 220
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC Characteristics
Collector Cut-off Current
I
CBO
V
CB
= 5 V, I
E
= 0 mA
100
nA
Emitter Cut-off Current
I
EBO
V
EB
= 0.5 V, I
C
= 0 mA
100
nA
DC Current Gain
h
FE
Note 1
V
CE
= 1 V, I
C
= 2 mA
140
180
220
RF Characteristics
Gain Bandwidth Product
f
T
V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
15
18
GHz
Insertion Power Gain
|S
21e
|
2
V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
11
13
dB
Noise Figure
NF
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
0.8
1.5
dB
Associated Gain
G
a
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
9.5
11.5
dB
Reverse Transfer Capacitance
C
re
Note 2
V
CB
= 1 V, I
E
= 0 mA, f = 1 MHz
0.2
0.4
pF
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NESG2046M33(A) | 制造商:Renesas Electronics Corporation 功能描述: |
| NESG2046M33-A | 功能描述:射頻硅鍺晶體管 NPN Silicn Germanium Amp/Oscilltr RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| NESG2046M33-T3-A | 功能描述:射頻硅鍺晶體管 NPN Silicn Germanium Amp/Oscilltr RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| NESG2101M05 | 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| NESG2101M05-A | 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
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