參數(shù)資料
型號： NE721S01-T1B
廠商： NEC Corp.
英文描述： GENERAL PURPOSE L TO X-BAND GaAs MESFET
中文描述： 一般目的L至X波段GaAs MESFET器件
文件頁數(shù)： 4/5頁
文件大?。?/td> 32K
代理商： NE721S01-T1B
FREQUENCY
(GHz)
S
11
S
21
S
12
S
22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
.921
.850
.774
.701
.647
.615
.617
.645
.678
.708
.750
.784
.820
.853
.875
.872
.893
.890
.882
-53.1
-78.0
-103.0
-127.9
-153.9
176.2
150.6
130.4
111.1
92.0
75.3
62.3
52.6
44.3
34.9
24.2
17.5
12.4
3.386
3.166
2.944
2.732
2.556
2.344
2.116
1.926
1.768
1.612
1.453
1.292
1.157
1.026
.890
.754
.648
.558
.490
133.7
112.6
92.4
73.2
54.5
35.7
18.3
2.1
-14.1
-30.7
-47.1
-62.2
-76.6
-90.5
-103.7
-116.4
-127.8
-138.2
-147.8
.055
.076
.087
.094
.098
.097
.092
.091
.094
.096
.101
.106
.113
.118
.121
.118
.119
.119
.120
57.6
41.4
27.8
15.7
5.7
-5.6
-11.4
-14.8
-19.4
-22.1
-27.1
-33.1
-37.0
-43.9
-50.7
-58.0
-65.5
-72.2
-79.8
.690
.650
.606
.560
.517
.457
.393
.332
.282
.254
.238
.231
.269
.361
.462
.556
.619
.665
.715
-25.9
-39.4
-50.9
-62.5
-72.1
-79.7
-87.4
-101.3
-120.5
-144.2
-170.8
159.5
125.6
98.1
81.9
71.2
59.7
49.8
39.8
9.0
FREQUENCY
(GHz)
S
11
S
21
S
12
S
22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
.922
.853
.780
.706
.652
.618
.618
.648
.676
.707
.747
.779
.814
.845
.868
.866
.888
.882
.874
-52.5
-77.0
-102.0
-126.7
-152.7
177.5
151.5
131.0
111.6
92.3
75.5
62.3
52.3
44.3
35.3
24.3
17.6
12.8
3.250
3.048
2.842
2.645
2.483
2.283
2.057
1.871
1.713
1.559
1.403
1.241
1.109
.980
.855
.727
.621
.539
.473
134.0
112.9
92.9
73.4
54.6
35.6
18.1
1.8
-14.5
-31.1
-47.5
-62.7
-76.6
-90.6
-103.2
-115.4
-127.2
-137.3
-146.1
.060
.082
.097
.105
.110
.110
.102
.100
.102
.104
.104
.106
.109
.114
.116
.114
.112
.111
.110
56.7
41.7
27.8
14.8
2.9
-8.2
-16.3
-20.7
-26.3
-31.1
-35.9
-40.8
-44.5
-49.5
-54.7
-63.3
-67.9
-76.8
-81.7
.672
.632
.586
.538
.488
.426
.354
.288
.239
.214
.204
.209
.260
.356
.457
.547
.610
.656
.706
-26.7
-40.6
-52.6
-64.6
-74.8
-82.8
-90.8
-105.1
-126.2
-153.1
178.3
146.7
113.7
89.5
76.4
66.7
56.1
46.7
37.3
8.8
NE721S01
TYPICAL SCATTERING PARAMETERS
(T
A
= 25C)
V
DS
= 3 V, I
DS
= 40 mA
V
DS
= 3 V, I
DS
= 30 mA
相關(guān)PDF資料
PDF描述
NE76038 LOW NOISE L TO Ku-BAND GaAs MESFET
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NE76084S LOW NOISE L TO Ku BAND GaAs MESFET
NE76100 ACB 5C 5#16S PIN PLUG
NE76184A-T1 GENERAL PURPOSE FET N-CHANNEL GaAs MES FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NE72218 功能描述:射頻GaAs晶體管 RO 551-NE34018 5/04 RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體:
NE72218-T1 制造商:NEC 制造商全稱:NEC 功能描述:C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET
NE72218-T2 制造商:NEC 制造商全稱:NEC 功能描述:C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET
NE722S01 功能描述:射頻GaAs晶體管 C-X Band GaAs MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體:
NE722S01-T1 功能描述:射頻GaAs晶體管 C-X Band GaAs MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體:
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