參數(shù)資料
型號(hào)： NE699M01
廠商： NEC Corp.
英文描述： NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
中文描述： npn型外延硅晶體管的微波高增益放大
文件頁數(shù)： 5/6頁
文件大小： 50K
代理商： NE699M01
NE699M01
NE699M01
V
CE
= 2 V, I
C
= 1 mA
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
(GHz)
0.100
0.250
0.400
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.500
3.000
3.500
4.000
4.500
5.000
V
CE
= 2 V, I
C
= 5 mA
MAG
0.965
0.957
0.939
0.903
0.856
0.806
0.754
0.708
0.672
0.642
0.623
0.619
0.637
0.661
0.685
0.705
0.721
ANG
-5.8
-16.5
-26.7
-40.4
-54.6
-68.8
-83.5
-98.0
-111.7
-125.3
-137.6
-162.8
178.8
164.5
152.0
139.7
126.6
MAG
3.118
2.957
2.971
2.934
2.871
2.754
2.648
2.503
2.334
2.196
2.045
1.687
1.410
1.179
1.000
0.851
0.735
ANG
169.3
164.0
155.1
143.5
132.0
120.8
109.7
99.4
89.6
80.6
71.9
53.0
37.3
23.6
11.8
1.7
-7.0
MAG
0.013
0.031
0.049
0.070
0.088
0.102
0.112
0.118
0.119
0.118
0.114
0.095
0.073
0.056
0.058
0.079
0.109
ANG
82.4
76.7
69.3
59.7
50.0
40.9
32.3
24.3
17.0
10.6
5.1
-4.3
-5.0
9.0
34.6
49.5
52.3
MAG
0.990
0.985
0.972
0.947
0.917
0.881
0.844
0.809
0.778
0.752
0.732
0.706
0.708
0.728
0.753
0.780
0.804
ANG
-4.4
-10.5
-16.8
-24.9
-32.8
-40.3
-47.4
-54.0
-60.4
-66.6
-72.7
-87.7
-102.9
-117.2
-130.2
-141.1
-150.0
(dB)
23.8
19.8
17.8
16.2
15.1
14.3
13.7
13.3
12.9
12.7
12.6
12.5
10.4
8.8
8.0
7.9
8.3
0.17
0.10
0.13
0.17
0.22
0.27
0.33
0.38
0.45
0.51
0.59
0.83
1.17
1.58
1.55
1.16
0.89
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
°
C)
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Note:
1. Gain Calculation:
MAG =
|S
21
|
|S
12
|
K - 1
).
(
K
±
= S
11
S
22
- S
21
S
12
,
When K
≤
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
Coordinates in Ohms
Frequency in GH
z
V
CE
=
2 V, I
C
= 5
mA
j50
j25
j10
0
-j10
-j25
-j50
-j100
j100
0
S
11
5 GHz
S
11
0.1 GHz
S
22
5 GHz
S
22
0.1 GHz
90
270
180
225
315
135
45
S
21
5 GHz
S
21
0.1 GHz
S
12
5 GHz
S
12
0.1 GHz
0
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
(GHz)
0.100
2.500
0.400
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.500
3.000
3.500
4.000
0.450
5.000
MAG
0.844
0.467
0.735
0.634
0.546
0.482
0.442
0.422
0.416
0.419
0.429
0.467
0.503
0.534
0.560
0.716
0.602
ANG
-11.8
162.3
-49.7
-72.3
-93.2
-112.5
-130.3
-146.3
-159.8
-171.6
179.0
162.3
151.4
142.8
134.8
-55.4
115.7
MAG
13.310
3.441
11.439
10.168
8.857
7.697
6.735
5.939
5.277
4.746
4.288
3.441
2.860
2.433
2.108
11.128
1.636
ANG
166.4
50.7
140.3
124.9
112.0
101.2
91.9
83.9
76.8
70.2
64.2
50.7
38.7
27.7
17.3
136.4
-2.0
MAG
0.012
0.075
0.041
0.053
0.061
0.065
0.068
0.069
0.070
0.071
0.072
0.075
0.081
0.092
0.106
0.045
0.143
ANG
79.5
33.4
60.0
49.9
42.4
37.2
33.7
31.6
30.4
30.2
30.6
33.4
37.6
41.2
43.1
57.4
41.5
MAG
0.955
0.423
0.847
0.751
0.665
0.596
0.541
0.501
0.471
0.450
0.436
0.423
0.435
0.465
0.503
0.826
0.588
ANG
-8.7
-100.4
-31.2
-42.8
-52.0
-59.3
-65.6
-71.3
-76.6
-81.9
-87.1
-100.4
-113.5
-125.3
-135.6
-34.4
-150.7
(dB)
30.4
26.4
24.5
22.8
21.7
20.7
20.0
19.3
18.8
18.3
16.5
14.0
12.5
11.5
10.9
10.9
10.6
0.21
0.19
0.25
0.35
0.45
0.56
0.66
0.77
0.87
0.96
1.04
1.19
1.24
1.21
1.12
1.02
0.91
相關(guān)PDF資料
PDF描述
NE699M01-T1 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
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參數(shù)描述
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NE7 功能描述:CLAMP VINYL-DIPPED 7/16X3/8" RoHS:是 類別:線纜，導(dǎo)線 - 管理 >> 線夾和夾具 系列:NE 標(biāo)準(zhǔn)包裝:100 系列:TC 類型:C-夾 開口尺寸:0.79" L x 0.54" W x 0.67" H（20.1mm x 13.7mm x 17.0mm） 安裝類型:釘子 材質(zhì):聚丙烯 顏色:黑
NE-7 制造商:Richco 功能描述:
NE710 制造商:NEC 制造商全稱:NEC 功能描述:LOW NOISE Ku-K BAND GaAs MESFET
NE71-0.2 制造商:SIPAT 制造商全稱:SIPAT 功能描述:GSM Repeater
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