- 您現(xiàn)在的位置：買賣IC網 > PDF目錄361113 > NE699M01-T1 (NEC Corp.) NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION PDF資料下載
參數(shù)資料
| 型號： | NE699M01-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
| 中文描述： | npn型外延硅晶體管的微波高增益放大 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 50K |
| 代理商： | NE699M01-T1 |
NE699M01
NE699M01
V
CE
= 2 V, I
C
= 1 mA
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
(GHz)
0.100
0.250
0.400
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.500
3.000
3.500
4.000
4.500
5.000
V
CE
= 2 V, I
C
= 5 mA
MAG
0.965
0.957
0.939
0.903
0.856
0.806
0.754
0.708
0.672
0.642
0.623
0.619
0.637
0.661
0.685
0.705
0.721
ANG
-5.8
-16.5
-26.7
-40.4
-54.6
-68.8
-83.5
-98.0
-111.7
-125.3
-137.6
-162.8
178.8
164.5
152.0
139.7
126.6
MAG
3.118
2.957
2.971
2.934
2.871
2.754
2.648
2.503
2.334
2.196
2.045
1.687
1.410
1.179
1.000
0.851
0.735
ANG
169.3
164.0
155.1
143.5
132.0
120.8
109.7
99.4
89.6
80.6
71.9
53.0
37.3
23.6
11.8
1.7
-7.0
MAG
0.013
0.031
0.049
0.070
0.088
0.102
0.112
0.118
0.119
0.118
0.114
0.095
0.073
0.056
0.058
0.079
0.109
ANG
82.4
76.7
69.3
59.7
50.0
40.9
32.3
24.3
17.0
10.6
5.1
-4.3
-5.0
9.0
34.6
49.5
52.3
MAG
0.990
0.985
0.972
0.947
0.917
0.881
0.844
0.809
0.778
0.752
0.732
0.706
0.708
0.728
0.753
0.780
0.804
ANG
-4.4
-10.5
-16.8
-24.9
-32.8
-40.3
-47.4
-54.0
-60.4
-66.6
-72.7
-87.7
-102.9
-117.2
-130.2
-141.1
-150.0
(dB)
23.8
19.8
17.8
16.2
15.1
14.3
13.7
13.3
12.9
12.7
12.6
12.5
10.4
8.8
8.0
7.9
8.3
0.17
0.10
0.13
0.17
0.22
0.27
0.33
0.38
0.45
0.51
0.59
0.83
1.17
1.58
1.55
1.16
0.89
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
°
C)
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Note:
1. Gain Calculation:
MAG =
|S
21
|
|S
12
|
K - 1
).
(
K
±
= S
11
S
22
- S
21
S
12
,
When K
≤
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
Coordinates in Ohms
Frequency in GH
z
V
CE
=
2 V, I
C
= 5
mA
j50
j25
j10
0
-j10
-j25
-j50
-j100
j100
0
S
11
5 GHz
S
11
0.1 GHz
S
22
5 GHz
S
22
0.1 GHz
90
270
180
225
315
135
45
S
21
5 GHz
S
21
0.1 GHz
S
12
5 GHz
S
12
0.1 GHz
0
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
(GHz)
0.100
2.500
0.400
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.500
3.000
3.500
4.000
0.450
5.000
MAG
0.844
0.467
0.735
0.634
0.546
0.482
0.442
0.422
0.416
0.419
0.429
0.467
0.503
0.534
0.560
0.716
0.602
ANG
-11.8
162.3
-49.7
-72.3
-93.2
-112.5
-130.3
-146.3
-159.8
-171.6
179.0
162.3
151.4
142.8
134.8
-55.4
115.7
MAG
13.310
3.441
11.439
10.168
8.857
7.697
6.735
5.939
5.277
4.746
4.288
3.441
2.860
2.433
2.108
11.128
1.636
ANG
166.4
50.7
140.3
124.9
112.0
101.2
91.9
83.9
76.8
70.2
64.2
50.7
38.7
27.7
17.3
136.4
-2.0
MAG
0.012
0.075
0.041
0.053
0.061
0.065
0.068
0.069
0.070
0.071
0.072
0.075
0.081
0.092
0.106
0.045
0.143
ANG
79.5
33.4
60.0
49.9
42.4
37.2
33.7
31.6
30.4
30.2
30.6
33.4
37.6
41.2
43.1
57.4
41.5
MAG
0.955
0.423
0.847
0.751
0.665
0.596
0.541
0.501
0.471
0.450
0.436
0.423
0.435
0.465
0.503
0.826
0.588
ANG
-8.7
-100.4
-31.2
-42.8
-52.0
-59.3
-65.6
-71.3
-76.6
-81.9
-87.1
-100.4
-113.5
-125.3
-135.6
-34.4
-150.7
(dB)
30.4
26.4
24.5
22.8
21.7
20.7
20.0
19.3
18.8
18.3
16.5
14.0
12.5
11.5
10.9
10.9
10.6
0.21
0.19
0.25
0.35
0.45
0.56
0.66
0.77
0.87
0.96
1.04
1.19
1.24
1.21
1.12
1.02
0.91
相關PDF資料 |
PDF描述 |
|---|---|
| NE710 | LOW NOISE Ku-K BAND GaAs MESFET |
| NE71000 | LOW NOISE Ku-K BAND GaAs MESFET |
| NE71083-06 | LOW NOISE Ku-K BAND GaAs MESFET |
| NE71083-07 | LOW NOISE Ku-K BAND GaAs MESFET |
| NE71083-08 | LOW NOISE Ku-K BAND GaAs MESFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NE7 | 功能描述:CLAMP VINYL-DIPPED 7/16X3/8" RoHS:是 類別:線纜，導線 - 管理 >> 線夾和夾具 系列:NE 標準包裝:100 系列:TC 類型:C-夾 開口尺寸:0.79" L x 0.54" W x 0.67" H（20.1mm x 13.7mm x 17.0mm） 安裝類型:釘子 材質:聚丙烯 顏色:黑 |
| NE-7 | 制造商:Richco 功能描述: |
| NE710 | 制造商:NEC 制造商全稱:NEC 功能描述:LOW NOISE Ku-K BAND GaAs MESFET |
| NE71-0.2 | 制造商:SIPAT 制造商全稱:SIPAT 功能描述:GSM Repeater |
| NE71000 | 制造商:NEC 制造商全稱:NEC 功能描述:LOW NOISE Ku-K BAND GaAs MESFET |
發(fā)布緊急采購，3分鐘左右您將得到回復。