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參數(shù)資料
| 型號(hào)： | NE68719-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 中文描述： | 表面貼裝NPN硅高頻晶體管 |
| 文件頁數(shù)： | 5/21頁 |
| 文件大?。?/td> | 196K |
| 代理商： | NE68719-T1 |
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
°
C)
V
CE
= 1.0 V, I
C
= 3.0 mA
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
0.872
0.710
0.501
0.438
0.354
0.321
0.312
0.311
0.361
0.461
-14.000
-60.600
-104.700
-122.100
-159.700
170.800
145.400
123.000
83.600
51.700
8.998
7.542
5.258
4.463
3.211
2.502
2.064
1.777
1.438
1.206
165.400
130.500
99.100
87.700
65.100
46.800
30.300
15.400
-12.600
-40.100
0.023
0.079
0.114
0.124
0.144
0.164
0.186
0.210
0.263
0.315
80.600
55.100
37.200
32.100
24.100
18.400
12.900
6.800
-7.700
-25.300
0.971
0.807
0.595
0.527
0.425
0.377
0.352
0.334
0.280
0.211
-11.300
-39.500
-61.600
-68.900
-82.000
-92.400
-101.800
-111.500
-136.000
177.500
0.117
0.288
0.543
0.653
0.875
1.025
1.112
1.160
1.163
1.140
25.924
19.799
16.639
15.562
13.483
10.866
8.414
6.851
4.930
3.560
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
0.645
0.392
0.270
0.252
0.234
0.234
0.235
0.242
0.300
0.414
-29.400
-95.800
-144.400
-161.700
164.600
140.600
121.100
103.100
73.800
47.400
21.295
12.537
7.101
5.792
3.980
3.042
2.489
2.127
1.705
1.421
155.400
110.900
85.100
76.200
58.000
42.500
27.900
14.200
-12.200
-38.700
0.019
0.055
0.085
0.100
0.136
0.174
0.212
0.249
0.318
0.374
74.200
55.600
50.500
48.600
42.200
34.400
25.600
16.000
-4.300
-25.800
0.892
0.541
0.347
0.303
0.249
0.226
0.215
0.207
0.161
0.141
-21.300
-57.100
-73.800
-79.000
-89.300
-98.900
-107.400
-117.800
-151.100
133.500
0.247
0.618
0.884
0.948
1.037
1.069
1.079
1.080
1.065
1.054
30.495
23.578
19.219
17.628
13.489
10.825
8.983
7.590
5.736
4.375
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
0.962
0.893
0.755
0.689
0.559
0.481
0.440
0.417
0.434
0.512
-8.100
-38.800
-73.500
-89.000
-124.000
-154.200
178.000
152.500
103.700
63.400
3.385
3.278
2.809
2.566
2.063
1.704
1.461
1.288
1.083
0.929
168.800
144.800
114.700
101.800
74.800
52.700
33.400
16.800
-13.500
-42.700
0.023
0.091
0.152
0.170
0.192
0.197
0.195
0.195
0.215
0.270
81.800
62.800
40.300
31.300
13.700
2.300
-5.200
-9.700
-14.400
-23.500
0.993
0.944
0.831
0.776
0.666
0.599
0.560
0.531
0.473
0.410
-6.700
-25.400
-45.900
-54.200
-71.100
-84.300
-96.200
-107.700
-133.500
-174.700
0.122
0.160
0.321
0.399
0.593
0.787
0.968
1.131
1.264
1.201
21.678
15.566
12.667
11.788
10.312
9.370
8.746
5.997
3.931
2.658
V
CE
= 2.0 V, I
C
= 3.0 mA
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
Note:
1.Gain Calculations:
|S
21
|
|S
12
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
0.881
0.736
0.527
0.454
0.344
0.294
0.274
0.264
0.306
0.407
-12.200
-52.900
-92.900
-109.000
-144.400
-174.000
159.700
136.200
94.100
59.500
9.094
7.869
5.706
4.901
3.575
2.789
2.308
1.980
1.605
1.356
166.600
134.300
103.400
91.900
69.100
50.900
34.500
19.800
-7.800
-35.700
0.017
0.066
0.099
0.109
0.128
0.146
0.166
0.189
0.241
0.296
79.500
58.400
40.800
35.700
27.300
21.700
16.500
11.100
-2.400
-19.700
0.977
0.844
0.653
0.586
0.485
0.434
0.410
0.393
0.343
0.264
-9.600
-34.300
-54.800
-61.700
-74.400
-84.700
-94.000
-103.600
-126.700
-167.400
0.142
0.280
0.521
0.629
0.847
1.002
1.087
1.134
1.130
1.102
27.283
20.764
17.607
16.529
14.461
12.525
9.632
7.975
6.042
4.663
V
CE
= 1.0 V, I
C
= 10.0 mA
NE687 SERIES
Coordinates in Ohms
Frequency in GHz
(V
CE
= 1 V, I
C
= 1 mA)
20
10
5
4
3
2
1.5
1
.8
.6
.4
.2
-.2
-.4
-.6
-.8
-1
-1.5
-2
-3
-4
-5
-10
-20
0
20
10
1.5
.8
.6
.4
.2
5
4
S
11
3
2
1
S
22
0.1 GHz
0.1 GHz
S
22
5 GHz
S
11
5 GHz
90
270
180
225
315
135
45
0
2.5
S
12
0.1 GHz
S
21
5 GHz
S
12
5 GHz
S
21
0.1 GHz
NE68718
V
CE
= 1.0 V, I
C
= 1.0 mA
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
MAG =
K - 1
).
(
K
±
= S
11
S
22
- S
21
S
12
,
When K
≤
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
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| NE68730 | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
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| NE68733 | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68733-T1 | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE68719-T1-A | 功能描述:射頻雙極小信號(hào)晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE68730 | 制造商:NEC 制造商全稱:NEC 功能描述:SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68730-T1 | 功能描述:射頻雙極小信號(hào)晶體管 DISC BY CEL 2/02 SOT-323 NPN HI FREQ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE68733 | 制造商:NEC 制造商全稱:NEC 功能描述:SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68733-T1 | 制造商:CEL 制造商全稱:CEL 功能描述:SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
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