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參數資料
| 型號： | NE664M04-T2 |
| 廠商： | NEC Corp. |
| 英文描述： | MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 中文描述： | 中功率NPN硅高頻晶體管 |
| 文件頁數： | 1/9頁 |
| 文件大?。?/td> | 128K |
| 代理商： | NE664M04-T2 |
NE664M04
NEC's
MEDIUM POWER NPN
SILICON HIGH FR
E
QUENCY TRANSISTOR
R
2.05±0.1
1.25±0.1
3
1
1
4
2
0
1
2
+0.30
+0.01
-0.05
0
+
+
-
(leads 1, 3 and ,4)
0
+
+
-
HIGH GAIN BANDWIDTH:
f
T
= 20 GHz
HIGH OUTPUT POWER:
P
-1dB
= 26 dBm at 1.8 GHz
HIGH LINEAR GAIN:
G
L
= 12 dB at 1.8 GHz
LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
FEATURES
California Eastern Laboratories
DESCRIPTION
NEC's NE664M04 is fabricated using NEC's state-of-the-art
UHS0 25 GHz f
T
wafer process. With a transition frequency of
20 GHz, the NE664M04 is usable in applications from 100 MHz
to over 3 GHz. The NE664M04 provides P1dB of 26 dBm, even
with low voltage and low current, making this device an
excellent choice for the output or driver stage for mobile or fixed
wireless applications.
The NE664M04 is housed in NEC's low profile/flat lead style
"M04" package
Notes:
1. Pulsed measurement, pulse width
≤
350
μ
s, duty cycle
≤
2 %.
2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the
guard pin of capacitance meter.
3. Electronic Industrail Association of Japan
4.
MAG =
|S
21
|
|S
12
|
K - 1
).
(
K -
PART NUMBER
PACKAGE OUTLINE
EIAJ
3
REGISTRATION NUMBER
NE664M04
M04
2SC5754
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
CBO
I
EBO
h
FE
P
1dB
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current
1
Gain at V
CE
= 3 V, I
C
= 100 mA
Output Power at 1 dB compression point at V
CE
= 3.6 V, I
CQ
= 4 mA,
f = 1.8 GHz, P
in
= 15 dBm, 1/2 Duty Cycle
Linear Gain at V
CE
= 3.6 V, I
CQ
= 20 mA, f = 1.8 GHz, P
in
= 0 dBm,
1/2 Duty Cycle
Maximum Available Power Gain
4
at V
CE
= 3 V, I
C
= 100 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 100 mA, f = 2 GHz
Collector Efficiency, 3.6 V, I
CQ
= 4 mA, f = 1.8 GHz, P
in
= 15 dBm,
1/2 Duty Cycle
Gain Bandwidth at V
CE
= 3 V, I
C
= 100 mA, f = 0.5 GHz
Feedback Capacitance
2
at V
CB
= 3 V, I
C
= 0, f = 1 MHz
nA
nA
1000
1000
100
40
60
26.0
dBm
G
L
dB
12.0
MAG
|S
21E
|
2
dBm
dB
%
12.0
6.5
60
5.0
η
c
f
T
GHz
pF
16
20
1.0
Cre
1.5
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
D
R
PIN CONNECTIONS
1. Emitter
2. Collector
3. Emitter
4. Base
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相關代理商/技術參數 |
參數描述 |
|---|---|
| NE664M04-T2-A | 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE66719 | 制造商:CEL 制造商全稱:CEL 功能描述:NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE66719-T1 | 制造商:CEL 制造商全稱:CEL 功能描述:NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE67300 | 制造商:NEC 制造商全稱:NEC 功能描述:LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY |
| NE67383 | 制造商:NEC 制造商全稱:NEC 功能描述:LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY |
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