參數(shù)資料
型號: NE556-1
廠商: NXP Semiconductors N.V.
英文描述: Dual timer
中文描述: 雙計時器
文件頁數(shù): 3/5頁
文件大?。?/td> 103K
代理商: NE556-1
Philips Semiconductors Linear Products
Product specification
NE/SA/SE556/NE556-1
Dual timer
August 31, 1994
355
ELECTRICAL CHARACTERISTICS
TA=25°C, VCC=+5V to +15V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
SE556
NE/SA556
NE556-1
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
Min
Typ
Max
Min
Typ
Max
UNIT
VCC
Supply voltage
4.5
18
4.5
16
V
VCC=5V, RL=∞
6
10
6
12
mA
ICC
Supply current (low state)1
VCC=15V, RL=∞
20
24
20
30
mA
Timing error (monostable)
RA=2k to 100k
tM
Initial accuracy2
C=0.1
F
0.5
2.0
0.75
3.0
%
tM/T
Drift with temperature
T=1.1 RC
30
100
50
150
ppm/
°C
tM/VS
Drift with supply voltage
0.05
0.2
0.1
0.5
%/V
Timing error (astable)
RA, RB=1k to 100k
tA
Initial accuracy2
C=0.
F
4
6
5
13
%
tA/T
Drift with temperature
VCC=15V
400
500
400
500
ppm/
°C
tA/VS
Drift with supply voltage
0.15
0.6
0.3
1
%/V
VC
Control voltage level
VCC=15V
9.6
10.0
10.4
9.0
10.0
11.0
V
VC
Control voltage level
VCC=5V
2.9
3.33
3.8
2.6
3.33
4.0
V
Threshold voltage
VCC=15V
9.4
10.0
10.6
8.8
10.0
11.2
V
VTH
VCC=5V
2.7
3.33
4.0
2.4
3.33
4.2
V
ITH
Threshold current3
VCC = 15V, VTH = 10.5V
30
250
30
250
nA
Trigger voltage
VCC=15V
4.8
5.0
5.2
4.5
5.0
5.6
V
VTRIG
VCC=5V
1.45
1.67
1.9
1.1
1.67
2.2
V
ITRIG
Trigger current
VTRIG=0V
0.5
0.9
0.5
2.0
A
VRESET
Reset voltage5
0.4
0.7
1.0
0.4
0.7
1.0
V
Reset current
VRESET=0.4V
0.4
0.1
0.4
0.1
0.6
mA
IRESET
Reset current
VRESET=0V
0.4
1.0
0.4
1.5
mA
VOL
Output voltage (low)
VCC=15V
V
VOL
Output voltage (low)
ISINK=10mA
0.1
0.15
0.1
0.25
V
VOL
ISINK=50mA
0.4
0.5
0.4
0.75
V
VOL
SE556
2.0
2.25
V
VOL
NE/SA556
ISINK=100mA
2.0
3.2
VOL
NE556-1
2.0
2.5
Output voltage (low)
ISINK=200mA
2.5
V
VCC=5V
V
ISINK=8mA
0.1
0.2
0.25
0.3
V
ISINK=5mA
0.05
0.15
0.25
VCC=15V
V
ISOURCE=200mA
12.5
V
VOH
Output voltage (high)
ISOURCE=100mA
13.0
13.3
12.75
13.3
V
VCC=5V
ISOURCE=100mA
3.0
3.3
2.75
3.3
tOFF
Turn-off time6
NE556-1
VRESET=VCC
0.5
2.0
0.5
s
tR
Rise time of output
100
200
100
300
ns
tF
Fall time of output
100
200
100
300
ns
Discharge leakage current
20
100
20
100
nA
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