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參數(shù)資料
| 型號(hào)： | NE5511279A-T1A |
| 廠商： | NEC Corp. |
| 英文描述： | NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
| 中文描述： | 鄰舍7.5 V UHF頻段射頻功率硅勞工處場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 99K |
| 代理商： | NE5511279A-T1A |
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25 °C)
SYMBOLS PARAMETERS UNITS RATINGS
V
DS
Drain Supply Voltage
2
V 20.0
V
GS
Gate Supply Voltage V 6.0
I
D
Drain Current A 3.0
P
TOT
Total Power Dissipation W 20
T
CH
Channel Temperature °C 125
T
STG
Storage Temperature °C -55 to +125
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. V
DS
must be used under 12 V on RF operation.
NE5511279A
PART NUMBER QTY
NE5511279A-T1 12 mm wide embossed taping.
Gate pin faces the perforation side of
the tape.
1 Kpcs/Reel
NE5511279A-T1A 12 mm wide embossed taping.
Gate pin faces the perforation side of
the tape.
5 Kpcs/Reel
ORDERING INFORMATION
RECOMMENDED OPERATING LIMITS
SYMBOLS PARAMETERS UNITS TYP MAX
V
DS
Drain to Source Voltage V 7.5 8.0
V
GS
Gate Supply Voltage V 2.0 3.0
I
DS
Drain Current
1
A 2.5 3.0
P
IN
Input Power dBm 27 30
f = 900 MHz, V
DS
= 7.5 V
4.0
1.7
6.1
0.5
0.5
Source
Gate
Drain
5
1
1
0
Through hole
φ
0.2
×
33
P.C.B. LAYOUT
(Units in mm)
79A PACKAGE
Note:
Use rosin or other material to prevent solder from penetrating
through-holes.
f = 900 MHz
5
4
3
2
1
0
45
40
35
30
25
20
10
15
20
25
30
35
P
out
I
DS
η
add
η
d
100
75
50
25
0
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
O
o
OUTPUT POWER, DRAIN CURRENT,
η
d
,
η
add
vs. INPUT POWER
Input Power,P
in
(dBm)
D
fi
η
d
P
fi
η
a
f = 460 MHz
5
4
3
2
1
0
45
40
35
30
25
20
10
15
20
25
30
35
P
out
I
DS
η
add
η
d
100
75
50
25
0
O
o
OUTPUT POWER, DRAIN CURRENT,
η
d
,
η
add
vs. INPUT POWER
Input Power,P
in
(dBm)
D
fi
η
d
P
fi
η
a
D
D
D
D
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE5511279A-T1-A | 功能描述:射頻MOSFET電源晶體管 UHF Band RF Power RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| NE5511279A-T1A-A | 制造商:CEL 制造商全稱:CEL 功能描述:7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
| NE5512 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual high-performance operational amplifier |
| NE5512D | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual high-performance operational amplifier |
| NE5512N | 制造商:NXP Semiconductors 功能描述:Operational Amplifier, Dual AMP, Bipolar, 8 Pin, Plastic, DIP |
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