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參數(shù)資料
| 型號： | NE5510179A-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | 3.5V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS |
| 中文描述： | 3.5V的操作硅射頻功率MOSFET為1.9 GHz的輸電功放 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 39K |
| 代理商： | NE5510179A-T1 |
NE5510179A
P.C.B. LAYOUT
1
(Units in mm)
4.0
1.7
6.1
0.5
0.5
Source
Drain
Gate
5
1
1
0
Through hole
φ
0.2
×
33
Note:
1. Use rosin or other material to prevent solder from penetrating
through-holes.
O
O
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°
C)
O
O
Gate to Source Voltage, V
GS
(V)
OUTPUT POWER, DRAIN CURRENT,
EFFICIENCY, AND POWER ADDED
EFFICIENCY VS. INPUT POWER
Input Power, P
IN
(dBm)
D
D
O
O
O
O
OUTPUT POWER, DRAIN CURRENT,
EFFICIENCY, AND POWER ADDED
EFFICIENCY VS. GATE TO SOURCE
VOLTAGE
Gate to Source Voltage, V
GS
(V)
Input Power, P
IN
(dBm)
V
DS
= 3.5 V,
I
DQ
= 200 mA,
freq = 1.9 GHz
P
O
= 29.7 dBm
31
26
21
16
11
6
25
20
15
10
5
0
0
250
500
750
1000
1250
0
50
100
P
OUT
I
D
η
η
ADD
V
DS
= 3.5 V,
freq = 1.9 GHz,
PIN = 22 dBm
P
MAX
= 30.1 dBm
P
OUT
APC
31
30
29
28
27
26
4.0
3.0
2.0
1.0
0.0
0
250
500
750
1000
1250
0
50
100
η
η
ADD
I
DS
V
DS
= 2.8 V,
I
DQ
= 200 mA,
freq = 1.9 GHz
P
O
= 28.7 dBm
30
25
20
15
10
5
25
20
15
10
5
0
0
250
500
750
1000
1250
0
50
100
P
OUT
I
D
η
η
ADD
V
DS
= 2.8 V,
freq = 1.9 GHz,
P
IN
= 22 dBm
P
MAX
= 29.0 dBm
P
OUT
I
ds
APC
30
30
29
28
27
26
25
4.0
3.0
2.0
1.0
0.0
0
250
500
750
1000
1250
0
50
100
η
η
ADD
E
η
,
η
A
%
E
η
,
η
A
%
D
D
E
η
,
η
A
%
D
D
E
η
,
η
A
%
D
D
OUTPUT POWER, DRAIN CURRENT,
EFFICIENCY, AND POWER ADDED
EFFICIENCY VS. INPUT POWER
OUTPUT POWER, DRAIN CURRENT,
EFFICIENCY, AND POWER ADDED
EFFICIENCY VS. GATE TO SOURCE
VOLTAGE
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE5510279A | 制造商:Renesas Electronics Corporation 功能描述:RF POWER TRANSISTOR LDMOS |
| NE5510279A-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS |
| NE5510279A-T1-A | 制造商:Renesas Electronics Corporation 功能描述:RF POWER TRANSISTOR LDMOS |
| NE5511279A | 功能描述:射頻MOSFET電源晶體管 RO 551-NE5511279A-A RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| NE5511279A-A | 功能描述:射頻MOSFET電源晶體管 UHF Band RF Power RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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