參數(shù)資料
型號: NE52118
廠商: NEC Corp.
英文描述: L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT
中文描述: 募到S波段低噪聲放大器npn型GaAs HBT的
文件頁數(shù): 2/12頁
文件大?。?/td> 63K
代理商: NE52118
Preliminary Data Sheet P14544EJ1V0DS00
2
NE52118
RECOMMENDED OPERATING CONDITIONS (T
A
= +25 °C)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Collector to Emitter Voltage
V
CE
1.5
2.0
3.0
V
Collector Current
I
C
3
6
mA
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Emitter to Base Leak Current
I
EBO
V
EBO
= 3 V
0.2
1.0
μ
A
Collector to Base Leak Current
I
CBO
V
CBO
= 3 V
0.2
1.0
μ
A
Collector to Emitter Leak
Current
I
CEO
V
CEO
= 5 V
0.5
2.0
μ
A
DC current gain
h
FE
V
CE
= 2 V, I
C
= 3 mA
50
90
140
Base to Emitter Forward Voltage
V
FBE
I
BE
= 100
μ
A
1.0
1.2
1.4
V
Base to Collector Forward
Voltage
V
FBC
I
BC
= 100
μ
A
0.7
1.0
1.3
V
Noise Figure
NF
1.0
1.5
dB
Associated Gain
G
a
13.5
15
dB
Out Third-Order Distortion
Intercept Point
OIP
3
V
CE
= 2 V, I
C
= 3 mA,
f = 2 GHz,
Z
S
= Z
L
= 50
15
dBm
Noise Figure
NF
1.0
dB
Associated Gain
G
a
V
CE
= 2 V, I
C
= 5 mA,
f = 2 GHz, Z
S
= Z
L
= 50
16.3
dB
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