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參數(shù)資料
| 型號(hào)： | NE32400 |
| 廠商： | NEC Corp. |
| 英文描述： | C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP |
| 中文描述： | C至Ka波段超低噪聲放大器N溝道黃建忠晶體管芯片 |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大小： | 85K |
| 代理商： | NE32400 |
NE32400, NE24200
6
CHIP HANDLING
DIE ATTACHMENT
Die attach operation can be accomplished with Au-Sn (within a 300 C – 10 s) performs in a forming gas
environment.
Epoxy die attach is not recommend.
BONDING
Bonding wires should be minimum length, semi hard gold wire (3-8 % elongation) 20 microns in diameter.
Bonding should be performed with a wedge tip that has a taper of approximately 15 %. Bonding time should be
kept to minimum.
As a general rule, the bonding operation should be kept within a 280 C, 2 minutes for all bonding wires.
If longer periods are required, the temperature should be lowered.
PRECAUTIONS
The user must operate in a clean, dry environment. The chip channel is glassivated for mechanical protection only
and does not preclude the necessity of a clean environment.
The bonding equipment should be periodically checked for sources of surge voltage and should be properly
grounded at all times. In fact, all test and handling equipment should be grounded to minimize the possibilities of static
discharge.
Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with shottky
barrier gate.
CAUTION
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the Japanese law concerned and so on, especially in case of removal.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NE24200 | C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP |
| NE32484A-T1 | KJ 55C 55#22 SKT PLUG |
| NE32484A | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE32484A-SL | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE32484A-T1A | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE32400_98 | 制造商:NEC 制造商全稱:NEC 功能描述:ULTRA LOW NOISE PSEUDOMORPHIC HJ FET |
| NE32484A | 制造商:NEC 制造商全稱:NEC 功能描述:ULTRA LOW NOISE PSEUDOMORPHIC HJ FET |
| NE32484A_98 | 制造商:NEC 制造商全稱:NEC 功能描述:ULTRA LOW NOISE PSEUDOMORPHIC HJ FET |
| NE32484AS | 制造商:NEC 制造商全稱:NEC 功能描述:ULTRA LOW NOISE PSEUDOMORPHIC HJ FET |
| NE32484A-SL | 制造商:NEC 制造商全稱:NEC 功能描述:C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
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