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參數(shù)資料
| 型號： | NE1280200 |
| 廠商： | NEC Corp. |
| 英文描述： | Medium Power Amplifier HJ-FET chips(中等功率放大器結(jié)型場效應(yīng)管) |
| 中文描述： | 中等功率放大器黃建忠場效應(yīng)管芯片（中等功率放大器結(jié)型場效應(yīng)管） |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 34K |
| 代理商： | NE1280200 |
NE1280 SERIES
5
CHIP HANDLING
DIE ATTACHMENT
Die attach can be accomplished with a Au-Sn (300
±
10 C) performs in a forming gas environment.
Epoxy die attach is not recommended.
BONDING
Gate and drain bonding wires should be minimum length, semi-hard gold wire (3-8 % elongation) 30 microns or
less in diameter.
Bonding should be performed with a wedge tip that has a taper of approximately 15 %.
Die attach and bonding time should be kept to a minimum. As a general rule, the bonding operation should be
kept within a 280 C _ 5 minute curve. If longer periods are required, the temperature should be lowered.
PRECAUTIONS
The user must operate in a clean, dry environment.
The chip channel is glassivated for mechanical protection only and does not preclude the necessity of a clean
environment.
The bonding equipment should be periodically checked for sources of surge voltage and should be properly
grounded at all times. In fact, all test and handling equipment should be grounded to minimize the possibilities of static
discharge.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE12CT2 | 制造商:Schneider Electric 功能描述:NEUTRAL CURRENT TRANSFORMER, UNRATED |
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