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參數(shù)資料
| 型號(hào)： | NDF65312 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Fast Recovery Diode |
| 中文描述： | 660 A, 1200 V, SILICON, RECTIFIER DIODE |
| 封裝： | CB479, 2 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 57K |
| 代理商： | NDF65312 |
NDF653
2/7
SURGE RATINGS
Conditions
Max.
Units
6.5
kA
211 x 10
3
A
2
s
I
2
t for fusing
I
2
t
Surge (non-repetitive) forward current
I
FSM
Parameter
Symbol
10ms half sine; with 0% V
RRM,
T
j
= 125
o
C
5.2
kA
13.52 x 10
3
A
2
s
I
2
t for fusing
I
2
t
Surge (non-repetitive) forward current
I
FSM
10ms half sine; with 50% V
RRM,
T
j
= 125
o
C
THERMAL AND MECHANICAL DATA
dc
Conditions
Max.
Units
o
C/W
-
0.058
Anode dc
Clamping force 10kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.01
Double side
-
Single side
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
-
0.02
o
C/W
o
C/W
Cathode dc
-
0.063
o
C/W
Double side cooled
-
0.03
o
C/W
T
stg
Storage temperature range
-55
175
o
C
kN
11.0
9.0
Clamping force
-
T
vj
Virtual junction temperature
On-state (conducting)
-
125
o
C
Min.
t
rr
100
Symbol
Typ.
Units
Parameter
V
FM
Forward voltage
I
RRM
Peak reverse current
Reverse recovery time
Q
RA1
Recovered charge (50% chord)
I
RM
Reverse recovery current
K
Soft factor
V
TO
Threshold voltage
r
T
Slope resistance
V
FRM
Forward recovery voltage
di/dt = 1000A/
μ
s, T
j
= 125
o
C
-
-
V
At T
vj
= 125
o
C
-
1.7
m
At T
vj
= 125
o
C
-
1.7
V
1.8
-
-
-
60
A
-
45
μ
C
-
1.4
μ
s
At V
RRM
, T
case
= 125
o
C
-
mA
At 450A peak, T
case
= 25
o
C
-
2.65
V
Conditions
Max.
I
F
= 500A, di
RR
/dt = -80A/
μ
s
T
case
= 125
o
C, V
R
= 100V
CHARACTERISTICS
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