參數(shù)資料
型號(hào)： NCV7382DR2
廠商： ON Semiconductor
文件頁(yè)數(shù)： 10/16頁(yè)
文件大?。?/td> 0K
描述： IC TRANSCEIVER LIN ENH 8-SOIC
產(chǎn)品變化通告： Product Discontinuation 21/Jun/2007
標(biāo)準(zhǔn)包裝： 2,500
類型： 收發(fā)器
驅(qū)動(dòng)器/接收器數(shù)： 1/1
規(guī)程： LIN
電源電壓： 7 V ~ 18 V
安裝類型： 表面貼裝
封裝/外殼： 8-SOIC（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝： 8-SOICN
包裝： 帶卷 (TR)
NCV7382
http://onsemi.com
3
Electrical Specification
All voltages are referenced to ground (GND). Positive
currents flow into the IC.
The maximum ratings (in accordance with IEC 134)
given in the table below are limiting values that do not lead
to a permanent damage of the device but exceeding any of
these limits may do so. Long term exposure to limiting
values may effect the reliability of the device.
OPERATING CONDITIONS
Characteristic
Symbol
Min
Max
Unit
VS
7.0
18
V
VCC
4.5
5.5
V
Operating Ambient Temperature
TA
-40
+125
°C
MAXIMUM RATINGS
Rating
Symbol
Condition
Min
Max
Unit
VS
t < 1 min
-0.3
30
V
Load Dump, t < 500 ms
40
VCC
-
-0.3
+7.0
V
Transient Supply Voltage
VS.tr1
ISO 7637/1 Pulse 1 (Note 1)
-150
-
V
Transient Supply Voltage
VS..tr2
ISO 7637/1 Pulses 2 (Note 1)
-
100
V
Transient Supply Voltage
VS..tr3
ISO 7637/1 Pulses 3A, 3B
-150
150
V
BUS Voltage
VBUS
t < 500 ms , Vs = 18 V
-27
40
V
t < 500 ms ,Vs = 0 V
-40
Transient Bus Voltage
VBUS..tr1
ISO 7637/1 Pulse 1 (Note 2)
-150
-
V
Transient Bus Voltage
VBUS.tr2
ISO 7637/1 Pulses 2 (Note 2)
-
100
V
Transient Bus Voltage
VBUS.tr3
ISO 7637/1 Pulses 3A, 3B (Note 2)
-150
150
V
DC Voltage on Pins TxD, RxD
VDC
-
-0.3
7.0
V
ESD Capability, Charged Device Model
VESDCDM
(Note 3)
-1.0
1.0
kV
ESD Capability of BUS, RxD, TxD, VCC, EN Pins
ESD Capability of VS Pin
VESDHBM
Human Body Model, equivalent to
discharge 100 pF with 1.5 k
W (Note 3)
-2.0
-1.5
2.0
1.5
kV
Maximum Latchup Free Current at Any Pin
ILATCH
-
-500
500
mA
Maximum Power Dissipation
Ptot
At TA = 125°C
-
197
mW
Thermal Impedance
qJA
In Free Air
-
152
°C/W
Storage Temperature
Tstg
-
-55
+150
°C
Junction Temperature
TJ
-
-40
+150
°C
LEAD TEMPERATURE SOLDERING REFLOW
Lead Free, 60 sec -150 sec above 217, 40 sec Max at Peak
TSLD
-
265 Peak
°C
Leaded, 60 sec -150 sec above 183, 30 sec Max at Peak
TSLD
-
240 Peak
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. ISO 7637 test pulses are applied to VS via a reverse polarity diode and > 2.0 mF blocking capacitor.
2. ISO 7637 test pulses are applied to BUS via a coupling capacitance of 1.0 nF.
3. This device incorporates ESD protection and is tested by the following methods:
ESD HBM tested per AEC-Q100-002 (EIA/JESD22-A 114C)
ESD CDM tested per EIA/JESD22-C 101C, Field Induced Model.
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