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參數資料
| 型號： | NCV33152DR2G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | MOSFETs |
| 英文描述： | HIGH SPEED DUAL MOSFET DRIVERS |
| 中文描述： | 1.5 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO8 |
| 封裝： | LEAD FREE, PLASTIC, SOIC-8 |
| 文件頁數： | 8/12頁 |
| 文件大?。?/td> | 151K |
| 代理商： | NCV33152DR2G |
MC34152, MC33152, NCV33152
http://onsemi.com
8
LAYOUT CONSIDERATIONS
High frequency printed circuit layout techniques are
imperative to prevent excessive output ringing and
overshoot.
Do not attempt to construct the driver circuit
on wirewrap or plugin prototype boards.
When
driving large capacitive loads, the printed circuit board
must contain a low inductance ground plane to minimize
the voltage spikes induced by the high ground ripple
currents. All high current loops should be kept as short as
possible using heavy copper runs to provide a low
impedance high frequency path. For optimum drive
performance, it is recommended that the initial circuit
design contains dual power supply bypass capacitors
connected with short leads as close to the V
CC
pin and
ground as the layout will permit. Suggested capacitors are
a low inductance 0.1 F ceramic in parallel with a 4.7 F
tantalum. Additional bypass capacitors may be required
depending upon Drive Output loading and circuit layout.
Proper printed circuit board layout is extremely
critical and cannot be over emphasized.
Figure 19. Enhanced System Performance with
Common Switching Regulators
Figure 20. MOSFET Parasitic Oscillations
The MC34152 greatly enhances the drive capabilities of common switching
regulators and CMOS/TTL logic devices.
Series gate resistor R
g
may be needed to damp high frequency parasitic oscillations
caused by the MOSFET input capacitance and any series wiring inductance in the
gatesource circuit. R
g
will decrease the MOSFET switching speed. Schottky diode
D
1
can reduce the driver’s power dissipation due to excessive ringing, by preventing
the output pin from being driven below ground.
+
V
in
R
g
D
1
1N5819
1
TL494
or
TL594
V
CC
47
0.1
6
5.7V
2
4
3
1
1
7
5
V
in
Figure 21. Direct Transformer Drive
Figure 22. Isolated MOSFET Drive
Output Schottky diodes are recommended when driving inductive loads at high
frequencies. The diodes reduce the driver’s power dissipation by preventing the
output pins from being driven above V
CC
and below ground.
3
5
7
4 X
1N5819
1
1
Isolation
Boundary
1N
5819
3
1
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相關代理商/技術參數 |
參數描述 |
|---|---|
| NCV33161 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Universal Voltage Monitors |
| NCV33161DMR2G | 功能描述:電壓監(jiān)測器/監(jiān)控器 AEC ANA UNI VOLT MONITOR RoHS:否 制造商:Texas Instruments 監(jiān)測電壓數:2 監(jiān)測電壓:Adjustable 輸出類型:Open Drain 欠電壓閾值: 過電壓閾值: 準確性:1 % 工作電源電壓:1.5 V to 6.5 V 工作電源電流:1.8 uA 最大工作溫度:+ 125 C 封裝 / 箱體:SON-6 安裝風格:SMD/SMT |
| NCV33161DR2 | 功能描述:監(jiān)控電路 2.65V UnderVoltage RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數: 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復位:Resettable 監(jiān)視器:No Watchdog 電池備用開關:No Backup 上電復位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
| NCV33161DR2G | 功能描述:監(jiān)控電路 ANA UNIV VOLT MNTR RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數: 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復位:Resettable 監(jiān)視器:No Watchdog 電池備用開關:No Backup 上電復位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
| NCV33163 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:2.5 A, Step-Up/Down/ Inverting Switching Regulators |
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