Supply Voltage (from V<" />
參數(shù)資料
型號(hào): NCV33074DR2G
廠商: ON Semiconductor
文件頁(yè)數(shù): 20/26頁(yè)
文件大?。?/td> 0K
描述: ANA HI SPD/SS QUAD OA
標(biāo)準(zhǔn)包裝: 2,500
放大器類型: 通用
電路數(shù): 4
轉(zhuǎn)換速率: 13 V/µs
增益帶寬積: 4.5MHz
電流 - 輸入偏壓: 100nA
電壓 - 輸入偏移: 1000µV
電流 - 電源: 1.9mA
電流 - 輸出 / 通道: 30mA
電壓 - 電源,單路/雙路(±): 3 V ~ 44 V,±1.5 V ~ 22 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 14-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 14-SOICN
包裝: 帶卷 (TR)
MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A
http://onsemi.com
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Supply Voltage (from VEE to VCC)
VS
+44
V
Input Differential Voltage Range
VIDR
(Note 1)
V
Input Voltage Range
VIR
(Note 1)
V
Output Short Circuit Duration (Note 2)
tSC
Indefinite
Sec
Operating Junction Temperature
TJ
+150
°C
Storage Temperature Range
Tstg
60 to +150
°C
ESD Capability, Dual and Quad (Note 3)
Human Body Model
Machine Model
ESDHBM
ESDMM
2000
200
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Either or both input voltages should not exceed the magnitude of VCC or VEE.
2. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded (see Figure 2).
3. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AECQ100002 (JEDEC standard: JESD22A114)
ESD Machine Model tested per AECQ100003 (JEDEC standard: JESD22A115)
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