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參數資料
| 型號： | NCP5355DR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | MOSFETs |
| 英文描述： | 12 V Synchronous Buck Power MOSFET Driver |
| 中文描述： | 2 A HALF BRDG BASED MOSFET DRIVER, PDSO8 |
| 封裝： | SOIC-8 |
| 文件頁數： | 1/12頁 |
| 文件大?。?/td> | 102K |
| 代理商： | NCP5355DR2 |
Semiconductor Components Industries, LLC, 2004
June, 2004 Rev. 6
1
Publication Order Number:
NCP5355/D
NCP5355
12 V Synchronous Buck
Power MOSFET Driver
The NCP5355 is a dual MOSFET gate driver optimized to drive the
gates of both high and lowside Power MOSFETs in a Synchronous
Buck converter. The NCP5355 is an excellent companion to
multiphase controllers that do not have integrated gate drivers, such as
ON Semiconductor’s NCP5314 or NCP5316. This architecture
provides the power supply designer greater flexibility by being able to
locate the gate drivers close to the MOSFETs.
Driving MOSFETs with a 12 V source as opposed to a 5.0 V can
significantly reduce conduction losses. Optimized internal, adaptive
nonoverlap circuitry further reduces switching losses by preventing
simultaneous conduction of both MOSFETs.
The floating top driver design can accommodate MOSFET drain
voltages as high as 26 V. Both gate outputs can be driven low by
applying a low logic level to the Enable (EN) pin. An Undervoltage
Lockout function ensures that both driver outputs are low when the
supply voltage is low, and a Thermal Shutdown function provides the
IC with overtemperature protection.
The NCP5355 has the same pinout as the NCP5351 5.0 V
Gate Driver.
Features
8.0 V 14 V Gate Drive Capability
2.0 A Peak Drive Current
Rise and Fall Times < 15 ns Typical into 3300 pF
Propagation Delay from Inputs to Outputs < 30 ns
Adaptive Nonoverlap Time Optimized for Large Power MOSFETs
Floating Top Driver Accommodates Applications Up to 26 V
Undervoltage Lockout to Prevent Switching when the Input
Voltage is Low
Thermal Shutdown Protection Against Overtemperature
TG to DRN PullDown Resistor Prevents HV SupplyInduced
TurnOn of Top MOSFET
BG to PGND PullDown Resistor Prevents Transient Turn On of
Bottom MOSFET
Internal Bootstrap Diode Reduces Parts Count and Total
Solution Cost
Device
Package
Shipping
ORDERING INFORMATION
SO8
98 Units/Rail
SO8
2500 / Tape & Reel
NCP5355D
NCP5355DR2
A = Assembly Location
L
= Wafer Lot
Y = Year
W = Work Week
MARKING
DIAGRAMS
PIN CONNECTIONS
SO8
D SUFFIX
CASE 751
1
5355
ALYW
8
1
8
EN
CO
1
8
V
S
BST
BG
TG
PGND
DRN
http://onsemi.com
SO8 EP
D SUFFIX
CASE 751AC
SO8 EP
2500 / Tape & Reel
NCP5355PDR2
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
5355
ALYW
1
8
1
8
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相關代理商/技術參數 |
參數描述 |
|---|---|
| NCP5355DR2G | 功能描述:功率驅動器IC 12V 2A Buck Power MOSFET RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| NCP5355PDR2 | 功能描述:功率驅動器IC 12V 2A Buck Power RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| NCP5358MNTXG | 功能描述:開關變換器、穩(wěn)壓器與控制器 GATE DRIVERS FOR NOTEBOOK RoHS:否 制造商:Texas Instruments 輸出電壓:1.2 V to 10 V 輸出電流:300 mA 輸出功率: 輸入電壓:3 V to 17 V 開關頻率:1 MHz 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:WSON-8 封裝:Reel |
| NCP5359 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Gate Driver for Notebook Power Systems |
| NCP5359A | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Gate Driver for Notebook Power Systems |
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