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參數(shù)資料
| 型號： | NCP4423 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | 3A Dual High-Speed MOSFET Drivers |
| 中文描述： | 第3A雙路高速M(fèi)OSFET驅(qū)動器 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 100K |
| 代理商： | NCP4423 |
NCP4423, NCP4424, NCP4425
http://onsemi.com
3
ABSOLUTE MAXIMUM RATINGS
Rating
Value
Unit
Supply Voltage
+22
V
Input Voltage, IN A or IN B (V
DD
+ 0.3 V to GND – 5.0 V)
–5
V
Maximum Chip Temperature
+150
°
C
Storage Temperature Range, T
stg
–65 to +150
°
C
Lead Temperature (Soldering, 10 sec)
+300
°
C
Package Thermal Resistance
SOIC, R
θ
JA
PDIP, R
θ
JA
PDIP, R
θ
JC
155
–125
–45
°
C/W
Operating Temperature Range
–40 to +85
°
C
Package Power Dissipation (T
A
SOIC
PDIP
70
°
C)
470
730
mW
mc
ELECTRICAL CHARACTERISTICS
(T
A
= +25
°
C with 4.5 V
Characteristic
V
DD
18 V, unless otherwise specified.)
Symbol
Test Conditions
Min
Typ
Max
Unit
Input
Logic 1 High Input Voltage
V
OH
–
2.4
–
–
V
Logic 0 Low Input Voltage
V
IL
–
–
–
0.8
V
Input Current
I
IN
0 V
V
IN
V
DD
–1.0
–
1.0
μ
A
Output
High Output Voltage
V
OH
–
V
DD
–0.025
–
–
V
Low Output Voltage
V
OL
–
–
–
0.025
V
Output Resistance, High
R
OH
I
OUT
= 10 mA,
V
DD
= 18 V
–
2.8
5.0
Output Resistance, Low
R
OL
I
OUT
= 10 mA,
V
DD
= 18 V
–
3.5
5.0
Peak Output Current
I
PK
–
–
3.0
–
A
Latch–Up Protection
Withstand Reverse Current
I
REV
Duty Cycle
t
2%
300
μ
s
1.5
–
–
A
Switching Time
(Note 1.)
Rise Time
t
R
Figure 1, C
L
= 1800 pF
–
23
35
nsec
Fall Time
t
F
Figure 1, C
L
= 1800 pF
–
25
35
nsec
Delay Time 1
t
D1
Figure 1, C
L
= 1800 pF
–
33
75
nsec
Delay Time 2
t
D2
Figure 1, C
L
= 1800 pF
–
38
75
nsec
Power Supply
Power Supply Current
I
S
V
IN
= 3.0 V (Both Inputs)
V
IN
= 0 V (Both Inputs)
–
–
1.5
0.15
2.5
0.25
mA
1. Switching times guaranteed by design.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| NCP4423/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:3 A Dual High-Speed MOSFET Drivers |
| NCP4423DWR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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| NCP4424DWR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NCP4424P | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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