參數(shù)資料
型號(hào): NCP380HMU21AATBG
廠商: ON Semiconductor
文件頁(yè)數(shù): 18/23頁(yè)
文件大?。?/td> 622K
描述: IC CURRENT LIMIT SWITCH 6-UDFN
標(biāo)準(zhǔn)包裝: 3,000
功能: 限流
檢測(cè)方法: 高端
輸入電壓: 2.5 V ~ 5.5 V
電流 - 輸出: 2.1A
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 6-UDFN 裸露焊盤
供應(yīng)商設(shè)備封裝: 6-uDFN(2x2)
包裝: 帶卷 (TR)
NCP380, NCV380
http://onsemi.com
18
When the resistor is choosing to fit with the Customer
application, the limits of the over current threshold can be
calculated with the following formula:
)0.0000009 (Rlim * 22.375)
4
IOCP min + 1.6915129 * 0.0330328   Rlim ) 0.0011207(Rlim * 22.375)
2
* 0.0000451 (Rlim * 22.375)
3
)
(eq. 6)
IOCP max + 2.2885175 * 0.0446914   Rlim ) 0.0015163(Rlim * 22.375)
2
* 0.000061 (Rlim * 22.375)
3
)
) 0.0000012 (Rlim * 22.375)
4
(eq. 7)
IOCPtyp + 1.9900152 * 0.0388621   Rlim ) 0.0013185(Rlim * 22.375)
2
* 0.0000531 (Rlim * 22.375)
3
)
) 0.0000011 (Rlim * 22.375)
4
(eq. 8)
The minimum, typical and maximum current curves are
described in the following graph:
Figure 26. Current Threshold vs. Rlim Resistor
5
0
IOCP min vs. R
LIM
R
LIM
 (kW)
IOCP vs. R
LIM
IOCP max vs. R
LIM
7
9    11   13   15   17   19   21   23   25   27   29   31   33   35   37   39   41   43   45   47
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
That is recommended to respect 6 kW47 kW resistor
range for two reasons.
For the low resistor values, the current limit is pushed up
to high current level. Due to internal power dissipation
capability, a maximum of 2.4 A typical can be set for the
mDFN package if thermal consideration are respected. For
the TSOP6 version 1.2 A is the maximum recommended
value because the part could enter in thermal shutdown
mode before constant current regulation mode.
In the other side, if we want to keep 15% of accuracy, high
resistor values can be used up to 50 kW. With higher value,
the current threshold is lower than 500 mA, so in this case
degraded accuracy can be observed.
PCB Recommendations
The NCP380 integrates a PMOS FET rated up to 2 A, and
the PCB design rules must be respected to properly evacuate
the heat out of the silicon. The UDFN6 PAD1 must be
connected to ground plane to increase the heat transfer if
necessary. This pad must be connected to ground plane. By
increasing PCB area, the R
q
JA
  of the package can be
decreased, allowing higher power dissipation.
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