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參數(shù)資料
| 型號(hào)： | NCP3418APDR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | MOSFETs |
| 英文描述： | Dual Bootstrapped 12 V MOSFET Driver with Output Disable |
| 中文描述： | HALF BRDG BASED MOSFET DRIVER, PDSO8 |
| 封裝： | SOIC-8 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 90K |
| 代理商： | NCP3418APDR2 |
Semiconductor Components Industries, LLC, 2004
May, 2004 Rev. 10
1
Publication Order Number:
NCP3418/D
NCP3418, NCP3418A
Dual Bootstrapped 12 V
MOSFET Driver with
Output Disable
The NCP3418 and NCP3418A are dual MOSFET gate drivers
optimized to drive the gates of both highside and lowside power
MOSFETs in a synchronous buck converter. Each of the drivers is
capable of driving a 3000 pF load with a 25 ns propagation delay and a
20 ns transition time.
With a wide operating voltage range, high or low side MOSFET
gate drive voltage can be optimized for the best efficiency. Internal,
adaptive nonoverlap circuitry further reduces switching losses by
preventing simultaneous conduction of both MOSFETs.
The floating top driver design can accommodate VBST voltages as
high as 30 V, with transient voltages as high as 35 V. Both gate outputs
can be driven low by applying a low logic level to the Output Disable
(OD) pin. An Undervoltage Lockout function ensures that both driver
outputs are low when the supply voltage is low, and a Thermal
Shutdown function provides the IC with overtemperature protection.
The NCP3418A is identical to the NCP3418 except that there is no
internal charge pump diode.
The NCP3418 is pintopin compatible with Analog Devices
ADP3418 with the following advantages:
Faster Rise and Fall Times
Internal Charge Pump Diode Reduces Cost and Parts Count
Thermal Shutdown for System Protection
Integrated OVP
Internal Pulldown Resistor Suppresses Transient Turn On of Either
MOSFET
Features
Anti CrossConduction Protection Circuitry
Floating Top Driver Accommodates Boost Voltages of up to 30 V
One Input Signal Controls Both the Upper and Lower Gate Outputs
Output Disable Control Turns Off Both MOSFETs
Complies with VRM 10.x Specifications
Undervoltage Lockout
Thermal Shutdown
Thermally Enhanced Package Available
Device
Package
Shipping
ORDERING INFORMATION
SO8
98 Units/Rail
SO8
2500 Tape & Reel
NCP3418D
NCP3418DR2
A = Assembly Location
L
= Wafer Lot
Y = Year
W = Work Week
MARKING
DIAGRAMS
PIN CONNECTIONS
SO8
D SUFFIX
CASE 751
1
3418
ALYW
8
1
8
DRVL
V
CC
1
8
PGND
OD
SW
IN
DRVH
BST
http://onsemi.com
1
3418A
ALYW
8
SO8
2500 Tape & Reel
NCP3418ADR2
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
SO8
2500 Tape & Reel
NCP3418ADR2G
SO8 EP
PD SUFFIX
CASE 751AC
SO8 EP
SO8 EP 2500 Tape & Reel
SO8 EP 2500 Tape & Reel
98 Units/Rail
NCP3418PD
NCP3418PDR2
NCP3418APDR2
1
8
3418A
ALYW
1
8
3418
ALYW
1
8
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NCP3418B | 制造商:ON Semiconductor 功能描述: |
| NCP3418BDR2G | 功能描述:功率驅(qū)動(dòng)器IC 12V MosFET Driver w/Output Disable RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| NCP3418BMNR2G | 功能描述:功率驅(qū)動(dòng)器IC 12V MOSFET DRIVER RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| NCP3418D | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NCP3418DR2 | 功能描述:IC MOSFET DRIVER DUAL 12V 8-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:95 系列:- 配置:半橋 輸入類型:PWM 延遲時(shí)間:25ns 電流 - 峰:1.6A 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:118V 電源電壓:9 V ~ 14 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁面:1282 (CN2011-ZH PDF) 其它名稱:*LM5104M*LM5104M/NOPBLM5104M |
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