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參數(shù)資料
| 型號： | NCN4555MN |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 電源管理 |
| 英文描述： | 1.8V / 3V SIM Card Power Supply and Level Shifter |
| 中文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, QCC16 |
| 封裝： | 3 X 3 MM, 0.75 MM HEIGHT, 0.50 MM PITCH, QFN-16 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 110K |
| 代理商： | NCN4555MN |
Semiconductor Components Industries, LLC, 2006
March, 2006 Rev. 1
1
Publication Order Number:
NCN4555/D
NCN4555
1.8V / 3V SIM Card Power
Supply and Level Shifter
The NCN4555 is a level shifter analog circuit designed to translate
the voltages between a SIM Card and an external microcontroller or
MPU. A builtin LDOtype DCDC converter makes the NCN4555
useable to drive 1.8 V and 3.0 V SIM card. The device fulfills the
ISO78163 smart card interface standard as well as GSM 11.11 and
related (11.12 and 11.18) and 3G mobile requirements (IMT2000/3G
TS 31.101). With the STOP pin a low current shutdown mode can be
activated making the battery life longer. The Card power supply
voltage (SIM_V
CC
) is selected using a single pin (MOD_V
CC
).
Features
Supports 1.8 V or 3.0 V Operating SIM Card
The LDO is able to Supply More than 50 mA under 1.8 V and 3.0 V
Builtin Pullup Resistor for I/O Pin in Both Directions
All Pins are Fully ESD Protected According to ISO7816
Specifications – ESD Protection on SIM Pins in Excess of 7 kV
(Human Body Model)
Supports up to More than 5 MHz Clock
LowProfile 3x3 QFN16 Package
PbFree Packages are Available*
Typical Applications
SIM Card Interface Circuit for 2G, 2.5G and 3G Mobile Phones
Identification Module
Smart Card Readers
Wireless PC Cards
Figure 1. Typical Interface Application
RST
CLK
C4
GND
I/O
C8
DET
DET
GND
GND
GND
1.8 V to 5.5 V
2.7 V to 5.5 V
P3
P2
P1
P0
3
1
2
14
13
15
5
10
GND
7
9
11
8
1
2
3
4
5
6
7
8
M
SIM Card
Detect
N
SIM_RST
SIM_CLK
SIM_I/O
RST
CLK
I/O
V
DD
STOP
MOD_V
CC
SIM_V
CC
V
CC
1 F
0.1 F
0.1 F
V
BB
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
QFN16
MN SUFFIX
CASE 488AK
MARKING DIAGRAM
http://onsemi.com
1
16
Device
Package
Shipping
ORDERING INFORMATION
NCN4555MN
QFN16
123 Units / Rail
NCN4555MNR2
QFN16
3000/Tape & Reel
NCN4555MNG
QFN16
(PbFree)
123 Units / Rail
NCN4555MNR2G
QFN16
(PbFree)
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
A
L
Y
W
= Assembly Location
= Wafer Lot
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
4555
ALYW
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NCN4555MNG | 1.8V / 3V SIM Card Power Supply and Level Shifter |
| NCN4555MNR2 | 1.8V / 3V SIM Card Power Supply and Level Shifter |
| NCN4555MNR2G | 1.8V / 3V SIM Card Power Supply and Level Shifter |
| NCN4557 | 1.8 V/3.0 V Dual SIM/SAM/Smart Card Power Supply and Level Shifter |
| NCN4557MTG | 1.8 V/3.0 V Dual SIM/SAM/Smart Card Power Supply and Level Shifter |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NCN4555MNG | 功能描述:轉(zhuǎn)換 - 電壓電平 1.8V/3.3V Sim Card Power Supply RoHS:否 制造商:Micrel 類型:CML/LVDS/LVPECL to LVCMOS/LVTTL 傳播延遲時間:1.9 ns 電源電流:14 mA 電源電壓-最大:3.6 V 電源電壓-最小:3 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MLF-8 |
| NCN4555MNR2 | 功能描述:轉(zhuǎn)換 - 電壓電平 1.8V/3.3V Sim Card RoHS:否 制造商:Micrel 類型:CML/LVDS/LVPECL to LVCMOS/LVTTL 傳播延遲時間:1.9 ns 電源電流:14 mA 電源電壓-最大:3.6 V 電源電壓-最小:3 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MLF-8 |
| NCN4555MNR2G | 功能描述:轉(zhuǎn)換 - 電壓電平 1.8V/3.3V Sim Card Power Supply RoHS:否 制造商:Micrel 類型:CML/LVDS/LVPECL to LVCMOS/LVTTL 傳播延遲時間:1.9 ns 電源電流:14 mA 電源電壓-最大:3.6 V 電源電壓-最小:3 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MLF-8 |
| NCN4557 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:1.8 V/3.0 V Dual SIM/SAM/Smart Card Power Supply and Level Shifter |
| NCN4557MTG | 功能描述:轉(zhuǎn)換 - 電壓電平 ANA DUAL SMART CARD INT RoHS:否 制造商:Micrel 類型:CML/LVDS/LVPECL to LVCMOS/LVTTL 傳播延遲時間:1.9 ns 電源電流:14 mA 電源電壓-最大:3.6 V 電源電壓-最小:3 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MLF-8 |
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