Table 6. DC CHARACTERISTICS (VDD =" />
參數(shù)資料
型號(hào): NBXDBA014LN1TAG
廠商: ON Semiconductor
文件頁(yè)數(shù): 3/6頁(yè)
文件大?。?/td> 0K
描述: IC CLK XO 62.5/125MHZ 6CLCC
產(chǎn)品培訓(xùn)模塊: XO Replacement Overview
標(biāo)準(zhǔn)包裝: 1
系列: PureEdge™
類型: 振蕩器 - 晶體
頻率: 62.5MHz,125MHz
電源電壓: 2.97 V ~ 3.63 V
電流 - 電源: 50mA
工作溫度: -40°C ~ 85°C
封裝/外殼: 6-CLCC
包裝: 標(biāo)準(zhǔn)包裝
供應(yīng)商設(shè)備封裝: 6-CLCC(7x5)
安裝類型: 表面貼裝
其它名稱: NBXDBA014LN1TAGOSDKR
NBXDBA014
http://onsemi.com
3
Table 6. DC CHARACTERISTICS (VDD = 3.3 V ± 10%, GND = 0 V, TA = 40°C to +85°C)
Symbol
Characteristic
Conditions
Min.
Typ.
Max.
Units
IDD
Power Supply Current (Note 2)
50
65
mA
VIH
OE and FSEL Input HIGH Voltage
2000
VDD
mV
VIL
OE and FSEL Input LOW Voltage
GND 300
800
mV
IIH
Input HIGH Current
OE
FSEL
100
+100
mA
IIL
Input LOW Current
OE
FSEL
100
+100
mA
VOH
Output HIGH Voltage (Note 2)
VDD = 3.3 V
VDD1145
2155
VDD895
2405
mV
VOL
Output LOW Voltage (Note 2)
VDD = 3.3 V
VDD1945
1355
VDD1600
1700
mV
VOUTPP
Output Voltage Amplitude (Note 2)
780
mV
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
2. Measurement taken with outputs terminated with 50 ohm to VDD2 V.
Table 7. AC CHARACTERISTICS (VDD = 3.3 V ± 10%, GND = 0 V, TA = 40°C to +85°C) (Note 3)
Symbol
Characteristic
Conditions
Min.
Typ.
Max.
Units
fCLKOUT
Output Clock Frequency
FSEL = HIGH
62.5
MHz
FSEL = LOW
125
Df
Frequency Stability NBXDBA014
(Note 4)
±50
ppm
FNOISE
PhaseNoise Performance
fCLKout = 62.5 MHz/125 MHz
100 Hz of Carrier
111/104
dBc/Hz
1 kHz of Carrier
129/123
dBc/Hz
10 kHz of Carrier
138/132
dBc/Hz
100 kHz of Carrier
141/135
dBc/Hz
1 MHz of Carrier
141/135
dBc/Hz
10 MHz of Carrier
159/156
dBc/Hz
tjit(F)
RMS Phase Jitter
12 kHz to 20 MHz
0.4
0.9
ps
tjitter
Cycle to Cycle, RMS
1000 Cycles
3
10
ps
Cycle to Cycle, PeaktoPeak
1000 Cycles
15
35
ps
Period, RMS
10,000 Cycles
2
5
ps
Period, PeaktoPeak
10,000 Cycles
10
25
ps
tOE/OD
Output Enable/Disable Time
200
ns
tDUTY_CYCLE
Output Clock Duty Cycle
(Measured at Cross Point)
48
50
52
%
tR
Output Rise Time (20% and 80%)
380
620
ps
tF
Output Fall Time (80% and 20%)
400
620
ps
tstart
Startup Time
1
5
ms
Aging
1st Year
3
ppm
Every Year After 1st
1
ppm
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
3. Measurement taken with outputs terminated with 50 ohm to VDD2 V.
4. Parameter guarantees 10 years of aging. Includes initial stability at 25°C, shock, vibration, and first year aging.
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