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參數(shù)資料
| 型號(hào)： | NBSG86AMNR2 |
| 廠商： | ON Semiconductor |
| 文件頁數(shù)： | 13/17頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC SMART GATE SIGE DIFF 16QFN |
| 產(chǎn)品變化通告： | LTB Notification 06/Feb/2008 |
| 標(biāo)準(zhǔn)包裝： | 3,000 |
| 邏輯類型： | 可配置多功能 |
| 電路數(shù)： | 2 |
| 輸入數(shù)： | 2 |
| 施密特觸發(fā)器輸入： | 無 |
| 輸出類型： | 差分 |
| 電源電壓： | 2.375 V ~ 3.465 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 16-VFQFN 裸露焊盤 |
| 供應(yīng)商設(shè)備封裝： | 16-QFN（3x3） |
| 包裝： | 帶卷 (TR) |
| 其它名稱： | NBSG86AMNR2OSTR |
NBSG86A
http://onsemi.com
5
Table 7. Interfacing Options
INTERFACING OPTIONS
CONNECTIONS
CML
Connect VTD0, VTD1, VTSEL and VTD0, VTD1 to VCC
LVDS
Connect VTD0, VTD1, VTD0 and VTD1 together. Leave VTSEL open.
ACCOUPLED
Bias VTD0, VTD1, VTSEL and VTD0, VTD1 Inputs within (VIHCMR) Common Mode Range
RSECL, PECL, NECL
Standard ECL Termination Techniques
LVTTL, LVCMOS
An external voltage should be applied to the unused complementary differential input.
Nominal voltage 1.5 V for LVTTL and VCC/2 for LVCMOS inputs.
Table 8. ATTRIBUTES
Characteristics
Value
Internal Input Pulldown Resistors
(R1)
75 kW
Internal Input Pullup Resistor
(R2)
37.5 kW
ESD Protection
Human Body Model
Machine Model
Charged Device Model
> 1 KV
> 50 V
> 4 KV
Moisture Sensitivity (Note 6)
PbFree Pkg
QFN16
Level 1
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V0 @ 0.125 in
Transistor Count
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
6. For additional information, see Application Note AND8003/D.
Table 9. MAXIMUM RATINGS
Symbol
Parameter
Condition 1
Condition 2
Rating
Unit
VCC
Positive Power Supply
VEE = 0 V
3.6
V
VEE
Negative Power Supply
VCC = 0 V
3.6
V
VI
Positive Input
Negative Input
VEE = 0 V
VCC = 0 V
VI v VCC
VI w VEE
3.6
V
VINPP
Differential Input Voltage |Dn Dn|, |SEL SEL| VCC VEE w 2.8 V
VCC VEE < 2.8 V
2.8
|VCC VEE|
V
IIN
Input Current Through RT (50 W Resistor)
Static
Surge
45
80
mA
Iout
Output Current
Continuous
Surge
25
50
mA
TA
Operating Temperature Range
QFN16
40 to +85
°C
Tstg
Storage Temperature Range
65 to +150
°C
qJA
Thermal Resistance (JunctiontoAmbient)
(Note 7)
0 lfpm
500 lfpm
QFN16
41.6
35.2
°C/W
qJC
Thermal Resistance (JunctiontoCase)
2S2P (Note 7)
QFN16
4.0
°C/W
Tsol
Wave Solder
PbFree < 3 sec @ 260°C
265
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
7. JEDEC standard multilayer board 2S2P (2 signal, 2 power) with 8 filled thermal vias under exposed pad.
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| NBSG86AMNR2G | 功能描述:邏輯門 2.5V/3.3V SiGe Diff Smart Gate RoHS:否 制造商:Texas Instruments 產(chǎn)品:OR 邏輯系列:LVC 柵極數(shù)量:2 線路數(shù)量（輸入/輸出）:2 / 1 高電平輸出電流:- 16 mA 低電平輸出電流:16 mA 傳播延遲時(shí)間:3.8 ns 電源電壓-最大:5.5 V 電源電壓-最小:1.65 V 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DCU-8 封裝:Reel |
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