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參數(shù)資料
| 型號(hào)： | NBB-300-T1 |
| 廠商： | RF MICRO DEVICES INC |
| 元件分類： | 衰減器 |
| 英文描述： | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz |
| 中文描述： | 0 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 0.017 X 0.017 INCH, 0.004 INCH HEIGHT, ROHS COMPLIANT, CERAMIC, MICRO-X-4 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 293K |
| 代理商： | NBB-300-T1 |
1 of 12
Optimum Technology Matching Applied
GaAs HBT
GaAs MESFET
9
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
Functional Block Diagram
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc.
Product Description
The NBB-300 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost,
high-performance solution for general purpose RF and microwave amplification
needs. This 50
Ω
gain block is based on a reliable HBT proprietary MMIC design,
providing unsurpassed performance for small-signal applications. Designed with an
external bias resistor, the NBB-300 provides flexibility and stability. The NBB-300 is
packaged in a low-cost, surface-mount ceramic package, providing ease of assem-
bly for high-volume tape-and-reel requirements. It is available in either packaged or
chip (NBB-300-D) form, where its gold metallization is ideal for hybrid circuit
designs.surface-mount ceramic package, providing ease of assembly for high-vol-
ume tape-and-reel requirements. It is available in either packaged or chip (NBB-
300-D) form, where its gold metallization is ideal for hybrid circuit designs.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Ordering Information
NBB-300
NBB-300-T1
NBB-300-D
NBB-300-E
NBB-X-K1
1
3
2
4
RF OUT
RF IN
GND
GND
MARKING - N3
NBB-300
CASCADABLE BROADBAND
GaAs MMIC AMPLIFIER DC TO 12GHz
Features
Reliable, Low-Cost HBT Design
12.0dB Gain, +13.8dBm
P1dB@2GHz
High P1dB of
+14.3dBm@6.0GHz and
+11.2dBm@14.0GHz
Single Power Supply Operation
50
Ω
I/O Matched for High Freq.
Use
Applications
Narrow and Broadband Commer-
cial and Military Radio Designs
Linear and Saturated Amplifiers
Gain Stage or Driver Amplifiers
for MWRadio/Optical Designs
(PTP/PMP/
LMDS/UNII/VSAT/WLAN/Cellu-
lar/DWDM)
Package Drawing
UNITS:
Inches
(mm)
N
0.070
(1.78)
0.040
(1.02)
0.020
0.200 sq.
(5.08)
45°
0.055
(1.40)
0.005
(0.13)
Rev A11 DS070328
RoHS Compliant & Pb-Free Product
Package Style: Micro-X, 4-Pin, Ceramic
Cascadable Broadband GaAs MMIC Amplifier DC to 12GHz
Tape & Reel, 1000 Pieces
NBB-300 Chip Form (100 pieces minimum order)
Fully Assembled Evaluation Board
Extended Frequency InGaP Amp Designer’s Tool Kit
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NBB-310-D | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz |
| NBB-310-PCBA-41X | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz |
| NBB-310-T1 | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz |
| NBB-310 | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz |
| NBB-310_07 | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NBB-301 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:Bias Scheme for NBB-Series Amplifiers |
| NBB-302 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz |
| NBB-302_06 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz |
| NBB-302_1 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz |
| NBB-302-E | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz |
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