參數(shù)資料
型號(hào): NB4N840M
廠商: ON SEMICONDUCTOR
英文描述: 3.3V 2.7Gb/s Dual Differential Clock/Data 2 x 2 Crosspoint Switch with CML Output and Internal Termination(帶CML輸出和內(nèi)部終端的3.3V,2.7Gb/s雙差分時(shí)鐘/數(shù)據(jù)2x2交點(diǎn)開(kāi)關(guān))
中文描述: 3.3 2.7Gb / s雙差分時(shí)鐘/帶CML輸出和內(nèi)部終端(帶白血病輸出和內(nèi)部終端的3.3伏,2.7Gb /數(shù)據(jù)2 × 2交叉點(diǎn)開(kāi)關(guān)S雙差分時(shí)鐘/數(shù)據(jù)2X2的交點(diǎn)開(kāi)關(guān))
文件頁(yè)數(shù): 5/9頁(yè)
文件大小: 166K
代理商: NB4N840M
NB4N840M
http://onsemi.com
5
Table 5. DC CHARACTERISTICS, CLOCK INPUTS, CML OUTPUTS
V
CC
= 3.0 V to 3.6 V, T
A
=
40
°
C to +85
°
C
Symbol
Characteristic
Min
Typ
Max
Unit
I
CC
Power Supply Current (All outputs enabled)
130
170
mA
Vout
diff
CML Differential Output Swing (Note 4, Figures 5 and 12)
640
800
1000
mV
V
CMR
(Note 6)
CML Output Common Mode Voltage (Loaded 50 to V
CC
)
V
CC
200
mV
CML Single
Ended Input Voltage Range
V
CC
0.8
V
CC
+ 0.4
mV
V
ID
Differential Input Voltage (V
IHD
V
ILD
)
300
1600
mV
LVTTL CONTROL INPUT PINS
V
IH
Input HIGH Voltage (LVTTL Inputs)
2000
mV
V
IL
Input LOW Voltage (LVTTL Inputs)
800
mV
I
IH
Input HIGH Current (LVTTL Inputs)
10
10
A
I
IL
Input LOW Current (LVTTL Inputs)
10
10
A
R
TIN
CML Single
Ended Input Resistance
42.5
50
57.5
R
TOUT
Differential Output Resistance
85
100
115
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
4. CML outputs require 50 receiver termination resistors to V
CC
for proper operation (Figure 10).
5. Input and output parameters vary 1:1 with V
CC
.
6. V
CMR
min varies 1:1 with V
EE
, V
CMR
max varies 1:1 with V
CC
.
Table 6. AC CHARACTERISTICS
V
CC
= 3.0 V to 3.6 V, V
EE
= 0 V (Note 7, Figure 9)
Symbol
Characteristic
40
°
C
25
°
C
85
°
C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
V
OUTPP
Output Voltage Amplitude (@ V
INPPmin
) f
in
2 GHz
(See Figure 3)
f
in
3 GHz
f
in
3.5 GHz
280
235
170
365
310
220
280
235
170
365
310
220
280
235
170
365
310
220
mV
f
DATA
Maximum Operating Data Rate
2.7
3.2
2.7
3.2
2.7
3.2
Gb/s
t
PLH
,
t
PHL
Propagation Delay to Output Differential
D/D to Q/Q
140
225
340
140
225
340
140
225
340
ps
t
SKEW
Duty Cycle Skew (Note 8)
Within
Device Skew (Figure 4)
Device
to
Device Skew (Note 12)
5
5
20
25
25
85
5
5
20
25
25
85
5
5
20
25
25
85
ps
t
JITTER
RMS Random Clock Jitter (Note 10) f
in
Peak
to
Peak Data Dependent Jitter f
in
= 2.5 Gb/s
(Note 11)
3.2 GHz
f
in
= 3.2 Gb/s
0.15
7
7
0.5
20
20
0.15
7
7
0.5
20
20
0.15
7
7
0.5
20
20
ps
Crosstalk
Induced RMS Jitter (Note 13)
0.5
0.5
0.5
ps
V
INPP
Input Voltage Swing/Sensitivity
(Differential Configuration) (Note 9)
150
800
150
800
150
800
mV
t
r
t
f
Output Rise/Fall Times @ 0.5 GHz
(20%
80%)
Q, Q
80
135
80
135
80
135
ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
7. Measured by forcing V
INPP
(MIN) from a 50% duty cycle clock source. All loading with an external R
L
= 50 to V
CC
. Input edge rates 40 ps
(20%
80%).
8. Duty cycle skew is measured between differential outputs using the deviations of the sum of Tpw
and Tpw+ @ 0.5 GHz.
9. V
(MAX) cannot exceed 800 mV. Input voltage swing is a single
ended measurement operating in differential mode.
10.Additive RMS jitter using 50% duty cycle clock input signal.
11.Additive peak
to
peak data dependent jitter using input data pattern with PRBS 2
23
1 and K28.5, V
INPP
= 400 mV.
12.Device to device skew is measured between outputs under identical transition @ 0.5 GHz.
13.Data taken on the same device under identical condition.
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