Table 5. AC CHARACTERISTICS VCC = 3" />
參數(shù)資料
型號(hào): NB3N121KMNR2G
廠商: ON Semiconductor
文件頁(yè)數(shù): 8/11頁(yè)
文件大?。?/td> 0K
描述: IC FANOUT BUFFER 1:21 52QFN
標(biāo)準(zhǔn)包裝: 2,000
類型: 扇出緩沖器(分配),數(shù)據(jù)
電路數(shù): 1
比率 - 輸入:輸出: 1:21
差分 - 輸入:輸出: 是/是
輸入: HCSL, LVCMOS, LVDS, LVPECL, LVTTL
輸出: HCSL,LVDS
頻率 - 最大: 400MHz
電源電壓: 3 V ~ 3.6 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 52-VFQFN 裸露焊盤(pán)
供應(yīng)商設(shè)備封裝: 52-QFN(8x8)
包裝: 帶卷 (TR)
NB3N121K
http://onsemi.com
6
Table 5. AC CHARACTERISTICS VCC = 3.0 V to 3.6 V, GND = 0 V; 40°C to +85°C (Note 7)
Symbol
Characteristic
Min
Typ
Max
Unit
VOUTPP
Output Voltage Amplitude (@ VINPPmin) fin ≤ 400 MHz
725
1000
mV
tPLH,
tPHL
Propagation Delay (See Figure 3a)
CLK/CLK to Qx/Qx
550
800
950
ps
DtPLH,
DtPHL
Propagation Delay Variations Per Each Diff Pair
(Note 8) (See Figure 3a)
CLK/CLK to Qx/Qx
100
ps
tSKEW
Duty Cycle Skew (Note 9)
Within -Device Skew
Device to Device Skew (Note 10)
20
100
150
ps
tJIT
Additive RMS Phase Jitter (Note 11) Fin = 100 MHz
0.1
ps
VINPP
Input Voltage Swing/Sensitivity
(Differential Configuration)
150
VCC
850
mV
VCROSS
Absolute Crossing Magnitude Voltage (See Figure 3c)
250
550
mV
DVCROSS Variation in Magnitude of VCROSS (See Figure 3c)
150
mV
tr , tf
Absolute Magnitude in Output Risetime and Falltime (from 175 mV to 525 mV)
(See Figure 3b)
Qx, Qx
100
340
700
ps
Dtr, Dtf
Variation in Magnitude of Risetime and Falltime (SingleEnded) (See Figure 3b)
Qx, Qx
125
ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
7. Measured by forcing VINPP (MIN) from a 50% duty cycle clock source. Connect a 475 W resister from IREF (Pin 1) to GND. All outputs loaded
50 W to GND per Figure 6.
8. Measured from the input pair crosspoint to each single output pair crosspoint across temp and voltage ranges per Figure 3.
9. Duty cycle skew is measured between differential outputs using the deviations of the sum of Tpw- and Tpw+.
10.Skew is measured between outputs under identical conditions @ 50 MHz.
11. Phase noise integrated from 12 kHz to 20 MHz
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