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參數(shù)資料
| 型號： | NB3H83905CDR2G |
| 廠商： | ON Semiconductor |
| 文件頁數(shù)： | 10/14頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC CLK BUFFER 1:6 100MHZ 16-SOIC |
| 標準包裝： | 2,500 |
| 類型： | 扇出緩沖器（分配） |
| 電路數(shù)： | 1 |
| 比率 - 輸入:輸出： | 1:6 |
| 差分 - 輸入:輸出： | 無/無 |
| 輸入： | LVCMOS，LVTTL，晶體 |
| 輸出： | LVCMOS，LVTTL |
| 頻率 - 最大： | 100MHz |
| 電源電壓： | 1.6 V ~ 3.465 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 16-SOIC（0.154"，3.90mm 寬） |
| 供應商設備封裝： | 16-SOIC |
| 包裝： | 帶卷 (TR) |
NB3H83905C
http://onsemi.com
5
Table 6. DC CHARACTERISTICS
Symbol
Characteristic
Min
Typ
Max
Unit
VDD = VDDO = 3.135 V to 3.465 V (3.3 V $5%); GND = 0 V, TA = 405C to +855C
IDD
Core Quiescent Power Supply Current (ENABLEx = LOW)
10
mA
IDDO
Output Quiescent Power Supply Current (ENABLEx = LOW)
5
mA
VIH
Input HIGH Voltage ENABLEx, XTAL_IN/CLK
2
VDD +
0.3 V
V
VIL
Input LOW Voltage ENABLEx, XTAL_IN/CLK
0.3
0.8
V
VOH
Output HIGH Voltage (Note 4)
2.6
V
VOL
Output LOW Voltage (Note 4)
0.5
V
CIN
Input Capacitance
4
pF
CPD
Power Dissipation Capacitance (per Output) (Note 4)
19
pF
ROUT
Output Impedance (Note 4)
7
W
VDD = VDDO = 2.375 V to 2.625 V (2.5 V $5%); GND = 0 V, TA = 405C to +855C
IDD
Core Quiescent Power Supply Current (ENABLEx = LOW)
8
mA
IDDO
Output Quiescent Power Supply Current (ENABLEx = LOW)
4
mA
VIH
Input HIGH Voltage ENABLEx, XTAL_IN/CLK
1.7
VDD +
0.3 V
V
VIL
Input LOW Voltage ENABLEx, XTAL_IN/CLK
0.3
0.7
V
VOH
Output HIGH Voltage (IOH = 1 mA)
Output HIGH Voltage (Note 4)
2.0
1.8
V
VOL
Output LOW Voltage (IOL = 1 mA)
Output LOW Voltage (Note 4)
0.4
0.45
V
CIN
Input Capacitance
4
pF
CPD
Power Dissipation Capacitance (per Output) (Note 4)
18
pF
ROUT
Output Impedance (Note 4)
7
W
VDD = VDDO = 1.6 V to 2.0 V (1.8 V $0.2 V); GND = 0 V, TA = 405C to +855C
IDD
Core Quiescent Power Supply Current (ENABLEx = LOW)
5
mA
IDDO
Output Quiescent Power Supply Current (ENABLEx = LOW)
3
mA
VIH
Input HIGH Voltage ENABLEx, XTAL_IN/CLK
0.65*VDD
VDD +
0.3 V
V
VIL
Input LOW Voltage ENABLEx, XTAL_IN/CLK
0.3
0.35*VDD
V
VOH
Output HIGH Voltage (Note 4)
VDDO0.3
V
VOL
Output LOW Voltage (Note 4)
0.35
V
CIN
Input Capacitance
4
pF
CPD
Power Dissipation Capacitance (per Output) (Note 4)
16
pF
ROUT
Output Impedance (Note 4)
10
W
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification
limit values are applied individually under normal operating conditions and not valid simultaneously.
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