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參數(shù)資料
| 型號： | NB2872ASNR2G |
| 廠商： | ON Semiconductor |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC CLOCK SYNTHESIZR 6MA TSOT-6 |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 類型： | 時(shí)鐘/頻率合成器 |
| PLL： | 是 |
| 輸入： | CMOS，晶體 |
| 輸出： | CMOS |
| 電路數(shù)： | 1 |
| 比率 - 輸入:輸出： | 1:2 |
| 差分 - 輸入:輸出： | 無/無 |
| 頻率 - 最大： | 30MHz |
| 除法器/乘法器： | 是/無 |
| 電源電壓： | 3 V ~ 3.6 V |
| 工作溫度： | 0°C ~ 70°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | SC-74，SOT-457 |
| 供應(yīng)商設(shè)備封裝： | 6-TSOP |
| 包裝： | 剪切帶 (CT) |
| 其它名稱： | NB2872ASNR2GOSCT |
NB2872A
http://onsemi.com
3
Figure 3. Modulation Profile
Table 3. MAXIMUM RATINGS
Symbol
Description
Rating
Unit
VDD, VIN
Voltage on any pin with respect to Ground
0.5to+ 7.0
V
TSTG
Storage Temperature
--65 to +125
C
TA
Operating Temperature
0to70
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 4. DC ELECTRICAL CHARACTERISTICS (Test Conditions: All parameters are measured at room temperature 25C)
Symbol
Description
Min
Typ
Max
Unit
VIL
Input LOW Voltage
GND -- 0.3
0.8
V
VIH
Input HIGH Voltage
2.0
VDD +0.3
V
IIL
Input LOW Current
--35
mA
IIH
Input HIGH Current
35
mA
IXOL
XOUT Output LOW Current (@ 4.0 V, VDD =3.3 V)
3
mA
IXOH
XOUT Output HIGH Current (@ 2.5 V, VDD =3.3 V)
3
mA
VOL
Output LOW Voltage (VDD =3.3 V, IOL =20 mA)
0.4
V
VOH
Output HIGH Voltage (VDD =3.3 V, IOH =20 mA)
2.5
V
IDD
Static Supply Current (Note 1)
1.5
mA
ICC
Dynamic Supply Current (3.3 V, 30 MHz, and 15 pF loading)
6
mA
VDD
Operating Voltage
3.0
3.3
3.6
V
tON
Powerup Time (first locked cycle after powerup) (Note 2)
10
mS
ZOUT
Clock Output Impedance
50
Ω
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
1. XIN/CLKIN pin is pulled low.
2. VDD and XIN/CLKIN input are stable.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NB2879A | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Low Power, Reduced EMI Clock Synthesizer |
| NB2879ASNR2 | 功能描述:時(shí)鐘合成器/抖動清除器 2.5V/3.3V Low Power RoHS:否 制造商:Skyworks Solutions, Inc. 輸出端數(shù)量: 輸出電平: 最大輸出頻率: 輸入電平: 最大輸入頻率:6.1 GHz 電源電壓-最大:3.3 V 電源電壓-最小:2.7 V 封裝 / 箱體:TSSOP-28 封裝:Reel |
| NB2879ASNR2G | 功能描述:時(shí)鐘合成器/抖動清除器 HF - EMI REDUCER RoHS:否 制造商:Skyworks Solutions, Inc. 輸出端數(shù)量: 輸出電平: 最大輸出頻率: 輸入電平: 最大輸入頻率:6.1 GHz 電源電壓-最大:3.3 V 電源電壓-最小:2.7 V 封裝 / 箱體:TSSOP-28 封裝:Reel |
| NB2969A | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Low Power, Reduced EMI Clock Synthesizer |
| NB2969ASNR2 | 功能描述:鎖相環(huán) - PLL 2.5V/3.3V Low Power RoHS:否 制造商:Silicon Labs 類型:PLL Clock Multiplier 電路數(shù)量:1 最大輸入頻率:710 MHz 最小輸入頻率:0.002 MHz 輸出頻率范圍:0.002 MHz to 808 MHz 電源電壓-最大:3.63 V 電源電壓-最小:1.71 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:QFN-36 封裝:Tray |
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