參數(shù)資料
型號: NAND512R4A0BZB6
廠商: NUMONYX
元件分類: PROM
英文描述: 32M X 16 FLASH 1.8V PROM, 35 ns, PBGA55
封裝: 8 X 10 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-55
文件頁數(shù): 36/57頁
文件大?。?/td> 916K
代理商: NAND512R4A0BZB6
41/57
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
Figure 27. Read Status Register AC Waveform
Figure 28. Read Electronic Signature AC Waveform
Note: Refer to Table 12. for the values of the Manufacturer and Device Codes.
tELWL
tDVWH
Status Register
Output
70h
CL
E
W
R
I/O
tCLHWL
tWHDX
tWLWH
tWHCLL
tCLLRL
tDZRL
tRLQV
tEHQZ
tRHQZ
tWHRL
tELQV
tWHEH
ai08032
(Data Setup time)
(Data Hold time)
90h
00h
Man.
code
Device
code
CL
E
W
AL
R
I/O
tRLQV
Read Electronic
Signature
Command
1st Cycle
Address
Manufacturer and
Device Codes
ai08039b
(Read ES Access time)
tALLRL1
相關PDF資料
PDF描述
NAND512R4A0CZA6T 32M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
NAND512R4A2CZB6F 32M X 16 FLASH 1.8V PROM, 35 ns, PBGA55
NAND512W3A0AN1 64M X 8 FLASH 3V PROM, 35 ns, PDSO48
NAND512W3A0CZB6 64M X 8 FLASH 3V PROM, 35 ns, PBGA55
NAND128W4A0AZA1F 8M X 16 FLASH 3V PROM, 35 ns, PBGA55
相關代理商/技術(shù)參數(shù)
參數(shù)描述
NAND512R4A2CWFD 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film
NAND512R4A2CZA6 制造商:Micron Technology Inc 功能描述:512MB. 3V X8 NO OPTION TSOP48TSOP-1 48 12X20 AL 42 - Trays
NAND512R4A2DDI6 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film
NAND512W3A0AN6 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
NAND512W3A0AN6E 功能描述:閃存 2.7-3.6V 512M(64Mx8) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel