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參數(shù)資料
| 型號(hào)： | NAND256W4A2DZA6 |
| 廠(chǎng)商： | NUMONYX |
| 元件分類(lèi)： | PROM |
| 英文描述： | 16M X 16 FLASH 3V PROM, 12000 ns, PBGA63 |
| 封裝： | 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 150K |
| 代理商： | NAND256W4A2DZA6 |
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DATA BRIEFING
For further information please contact the STMicroelectronics distributor nearest to you.
FEATURES SUMMARY
s
HIGH DENSITY NAND FLASH MEMORIES
– Up to 1 Gbit memory array
– Up to 32Mbit spare area
– Cost effective solutions for mass storage ap-
plications
s
NAND INTERFACE
– x8 or x16 bus width
– Multiplexed Address/ Data
– Pinout compatibility for all densities
s
SUPPLY VOLTAGE
– 1.8V device: VCC = 1.65 to 1.95V
– 3.0V device: VCC = 2.7 to 3.6V
s
PAGE SIZE
– x8 device: (512 + 16 spare) Bytes
– x16 device: (256 + 8 spare) Words
s
BLOCK SIZE
– x8 device: (16K + 512 spare) Bytes
– x16 device: (8K + 256 spare) Words
s
PAGE READ / PROGRAM
– Random access: 12s (max)
– Sequential access: 50ns (min)
– Page program time: 200s (typ)
s
COPY BACK PROGRAM MODE
– Fast page copy without external buffering
s
CACHE PROGRAM MODE
– Internal Cache Register to improve the pro-
gram throughput
s
FAST BLOCK ERASE
– Block erase time: 2ms (Typ)
s
STATUS REGISTER
s
ELECTRONIC SIGNATURE
s
CHIP ENABLE ‘DON’T CARE’ OPTION
– Simple interface with microcontroller
Figure 1. Packages
s
AUTOMATIC PAGE 0 READ AT POWER-UP
OPTION
– Boot from NAND support
– Automatic Memory Download
s
SERIAL NUMBER OPTION
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HARDWARE DATA PROTECTION
– Program/Erase locked during Power transi-
tions
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DATA INTEGRITY
– 100,000 Program/Erase cycles
– 10 years Data Retention
s
DEVELOPMENT TOOLS
– Error Correction Code software and hard-
ware models
– Bad Blocks Management and Wear Leveling
algorithms
– PC Demo board with simulation software
– File System OS Native reference software
– Hardware simulation models
TSOP48
12 x 20 mm
VFBGA63 8.5x15x1 mm
TFBGA63 8.5x15x1.2 mm
VFBGA63 9x11x1 mm
FBGA
相關(guān)PDF資料 |
PDF描述 |
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| NAND256W4A3CN1F | 16M X 16 FLASH 3V PROM, 12000 ns, PDSO48 |
| NAND256R4A3DZA6E | 16M X 16 FLASH 1.8V PROM, 15000 ns, PBGA63 |
| NAND256W3A1CN6 | 32M X 8 FLASH 3V PROM, 12000 ns, PDSO48 |
| NAND256W4A1CZA1T | 16M X 16 FLASH 3V PROM, 12000 ns, PBGA63 |
| NAND256W4A1DZA1F | 16M X 16 FLASH 3V PROM, 12000 ns, PBGA63 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NAND32GAH0HZA5E | 制造商:Micron Technology Inc 功能描述:NAND EMMC - Trays |
| NAND32GAH0HZA5F | 制造商:Micron Technology Inc 功能描述:NAND EMMC - Tape and Reel |
| NAND32GAH0PZA5E | 制造商:Micron Technology Inc 功能描述:EMMC 4.3 4GB 12X16 41NM - Trays |
| NAND32GAH0PZA5F | 制造商:Micron Technology Inc 功能描述:NAND EMMC - Tape and Reel |
| NAND32GAHAKZO6E | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Trays |
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