參數(shù)資料
型號: NAND256W4A1CZA1T
廠商: STMICROELECTRONICS
元件分類: PROM
英文描述: 16M X 16 FLASH 3V PROM, 12000 ns, PBGA63
封裝: 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63
文件頁數(shù): 4/5頁
文件大?。?/td> 150K
代理商: NAND256W4A1CZA1T
4/5
PART NUMBERING
Table 3. Ordering Information Scheme
Devices are shipped from the factory with the memory content bits, in valid blocks, erased to ’1’.
For further information on any aspect of this device, please contact your nearest ST Sales Office.
Example:
NAND512R3A
0
A ZA
1
T
Device Type
NAND Flash Memory
Density
128 = 128Mb
256 = 256Mb
512 = 512Mb
01G = 1Gb
Operating Voltage
R = VCC = 1.65 to 1.95V
W = VCC = 2.7 to 3.6V
Bus Width
3 = x8
4 = x16
Family Identifier
A = 528 Bytes/ 264 Word Page
Options
0 = normal
1 = Read Page0 at Power-up
2 = Chip Enable Don’t Care
3 = Chip Enable Don’t Care Enabled and Read Page0 at Power-up
Silicon Version
A, B, C, D
Package
N = TSOP48 12 x 20mm
ZA = VFBGA63 9 x 11x1mm, 6x8 ball array, 0.8mm pitch (128Mbit and 256Mbit devices)
ZA = VFBGA63 8.5 x 15x1mm, 6x8 ball array, 0.8mm pitch (512Mbit devices)
ZA = TFBGA63 8.5 x 15x1.2mm, 6x8 ball array, 0.8mm pitch (1Gbit devices)
Temperature Range
1 = 0 to 70 °C
6 = –40 to 85 °C
Option
blank = Standard Packing
T = Tape & Reel Packing
E = Lead Free Package, Standard Packing
F = Lead Free Package, Tape & Reel Packing
相關(guān)PDF資料
PDF描述
NAND256W4A1DZA1F 16M X 16 FLASH 3V PROM, 12000 ns, PBGA63
NAND256W4A3DZA1T 16M X 16 FLASH 3V PROM, 12000 ns, PBGA63
NAND256W3A1AN1T 32M X 8 FLASH 3V PROM, 10000 ns, PDSO48
NAND01GR3A1AN1F 128M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND01GR4A3AZB6F 64M X 16 FLASH 1.8V PROM, 15000 ns, PBGA63
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