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參數(shù)資料
| 型號： | NAND128W4A0CV6T |
| 廠商： | 意法半導體 |
| 英文描述： | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| 中文描述： | 128兆，256兆，512兆位，1千兆位（x8/x16）528 Byte/264字的頁面，1.8V/3V，NAND閃存芯片 |
| 文件頁數(shù)： | 56/57頁 |
| 文件大?。?/td> | 410K |
| 代理商： | NAND128W4A0CV6T |
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NAND128-A, NAND256-A, NAND512-A, NAND01G-A
56/57
REVISION HISTORY
Table 29. Document Revision History
Date
Version
Revision Details
06-Jun-2003
1.0
First Issue
07-Aug-2003
2.0
Design Phase
27-Oct-2003
3.0
Engineering Phase
03-Dec-2003
4.0
Document promoted from Target Specification to Preliminary Data status.
V
CC
changed to V
DD
and I
CC
to I
DD
.
Title of
Table 2.
. changed to “
Product Description
” and Page Program Typical Timing
for NANDXXXR3A devices corrected.
Table 1., Product List
, inserted on page 2.
13-Apr-2004
5.0
WSOP48 and VFBGA55 packages added, VFBGA63 (9 x 11 x 1mm) removed.
Figure 19., Cache Program Operation
, modified and note 2 modified. Note removed
for t
WLWH
timing in
Table 20., AC Characteristics for Command, Address, Data Input
.
Meaning of t
BLBH4
modified, partly replaced by t
WHBH1
and t
WHRL
min for 3V devices
modified in
Table 21., AC Characteristics for Operations
.
References removed from
RELATED DOCUMENTATION
section and reference
made to ST Website instead.
Figure 6.
,
Figure 7.
,
Figure 29.
and
Figure 32.
modified.
Read Electronic Signature
paragraph clarified and
Figure 28., Read Electronic Signature AC Waveform
,
modified. Note 2 to
Figure 30., Read C Operation, One Page AC Waveform
, removed.
Note 3 to
Table 7., Address Insertion, x16 Devices
removed. Only 00h Pointer
operations are valid before a Cache Program operation. I
DD4
removed from
Table
18., DC Characteristics, 1.8V Devices
. Note added to
Figure 32., Block Erase AC
Waveform
. Small text changes.
28-May-2004
6.0
TFBGA55 package added (mechanical data to be announced). 512Mb Dual Die
devices added.
Figure 19., Cache Program Operation
modified.
Package code changed for TFBGA63 8.5 x 15 x 1.2mm, 6x8 ball array, 0.8mm pitch
(1Gbit Dual Die devices) in
Table 28., Ordering Information Scheme
.
02-Jul-2004
7.0
Cache Program removed from document. TFBGA55 package specifications added
(
Figure 40., TFBGA55 8 x 10mm - 6x8 active ball array - 0.80mm pitch, Package
Outline
and
Table 25., TFBGA55 8 x 10mm - 6x8 active ball array - 0.80mm pitch,
Package Mechanical Data
).
Test conditions modified for V
OL
and V
OH
parameters in
Table 19., DC Characteristics,
3V Devices
.
01-Oct-2004
8.0
Third part number corrected in
Table 1., Product List
. 512 Mbit Dual Die information
added to
Table 10., Copy Back Program Addresses
.
Block Erase
last address cycle
modified. Definition of a Bad Block modified in
Bad Block Management
paragraph.
RoHS COMPLIANCE
added to
SUMMARY DESCRIPTION
.
Figure 3., Logic Block
Diagram
modified.
Document promoted from Preliminary Data to Full Datasheet status.
03-Dec-2004
9.0
Automatic Page 0 Read at Power-Up option no longer available.
PC Demo board with simulation software removed from list of available development
tools.
Chip Enable (E)
paragraph clarified.
13-Dec-2004
10.0
R
ref
parameter added to
Table 16., Operating and AC Measurement Conditions
.
Description of the family clarified in the
SUMMARY DESCRIPTION
section.
25-Feb-2005
11.0
WSOP48 replaced with USOP48 package,
VFBGA63 (8.5 x 15 x 1mm) replaced with VFBGA63 (9 x 11 x 1mm) package,
TFBGA63 (8.5 x 15 x 1mm) replaced with TFBGA63 (9 x 11 x 1.2mm) package.
Changes to
Table 21.
,
Table 18.
and
Table 2.
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|---|---|
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| NAND512R3A0CZB6T | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
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| NAND512R3A2BZA1T | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND512R3A2BZB1E | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NAND16GAH0HZA5E | 制造商:Micron Technology Inc 功能描述:NAND EMMC - Trays |
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| NAND16GW3B6DPA6E | 功能描述:IC FLASH 16GBIT 114LFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040 |
| NAND16GW3B6DPA6F | 功能描述:IC FLASH 16GBIT 114LFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040 |
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