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參數(shù)資料
| 型號： | N643GT7MI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 64兆位（4個M x 16位）的CMOS 1.8伏，只有同時讀/寫，突發(fā)模式閃存 |
| 文件頁數(shù)： | 36/49頁 |
| 文件大?。?/td> | 382K |
| 代理商： | N643GT7MI |
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34
Am29BDS643G
25692A2 May 8, 2006
D A T A S H E E T
AC CHARACTERISTICS
Notes:
1. Figure shows total number of clock cycles set to four.
2. Figure shows that PS (power saving mode) has been enabled; one additional wait state occurs during initial data Da. Latency
is not present if PS is not enabled.
3. If any burst address occurs at a 64-word boundary, two additional clock cycle are inserted, and are indicated by RDY.
Figure 10.
Burst Mode Read (40 MHz)
Da
Da + 1
Da + 2
Da + n
OE#
A/DQ0:
A/DQ15
A16:
A21
Aa
AVD#
RDY
CLK
CE#
t
CES
t
ACS
t
AVDS
t
AVDH
t
AVDO
t
ACH
t
BACC
t
OE
t
OEZ
t
CEZ
t
IACC
t
BDH
Aa
4 cycles for initial access shown.
Programmable wait state function is set to 02h.
1 cycle
wait state
when PS
enabled
25 ns typ.
t
RACC
Hi-Z
Hi-Z
Hi-Z
t
RYDS
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