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參數(shù)資料
| 型號(hào)： | N4400TC220 |
| 廠(chǎng)商： | WESTCODE SEMICONDUCTORS LTD |
| 元件分類(lèi)： | 晶閘管 |
| 英文描述： | 8670 A, 2200 V, SCR |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 174K |
| 代理商： | N4400TC220 |
WESTCODE
Positive development in power electronics
N4400TC200 to N4400TC280
Data Sheet. Types N4400TC200 to N4400TC280 Issue 1.
Page 2 of 10
April, 2002
Characteristics
PARAMETER
MIN.
TYP.
MAX. TEST CONDITIONS (Note 1)
UNITS
VTM
Maximum peak on-state voltage
-
1.5
ITM=6000A
V
V0
Threshold voltage
-
0.9
V
rS
Slope resistance
-
0.1
m
dv/dt
Critical rate of rise of off-state voltage
1000
-
VD=80% VDRM, linear ramp, Gate O/C
V/
s
IDRM
Peak off-state current
-
250
Rated VDRM
mA
IRRM
Peak reverse current
-
250
Rated VRRM
mA
VGT
Gate trigger voltage
-
3.0
V
IGT
Gate trigger current
-
300
Tj=25°C, VD=10V, IT=3A
mA
IH
Holding current
-
1000
Tj=25°C
mA
tgd
Gate controlled turn-on delay time
-
0.5
1.0
tgt
Turn-on time
-
1.0
2.0
VD=67%VDRM, ITM=2000A, di/dt=10A/s,
IFG=2A, tr=0.5s, Tj=25°C
s
Qrr
Recovered Charge
-
12000
-
C
Qra
Recovered Charge, 50% chord
-
8000
10000
C
Irm
Reverse recovery current
-
320
-
A
trr
Reverse recovery time, 50% chord
-
45.0
-
ITM=4000A, tp=1000s, di/dt=10A/s,
Vr=50V
s
-
350
400
ITM=2000A, tp=1000s, di/dt=10A/s,
Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/s
tq
Turn-off time
-
400
450
ITM=2000A, tp=1000s, di/dt=10A/s,
Vr=50V, Vdr=80%VDRM, dVdr/dt=200V/s
s
--
0.008
Double side cooled
K/W
Rth(j-hs)
Thermal resistance, junction to heatsink
--
0.016
Single side cooled
K/W
F
Mounting force
63
-
77
kN
Wt
Weight
-
1.23
-
kg
Notes: -
1) Unless otherwise indicated Tj=125°C.
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