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參數(shù)資料
| 型號： | N02L163WN1AT2 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 2Mb Ultra-Low Power Asynchronous CMOS SRAM |
| 中文描述： | 2MB的超低功耗CMOS SRAM的異步 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 272K |
| 代理商： | N02L163WN1AT2 |
NanoAmp Solutions, Inc.
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
N02L163WN1A
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
(DOC# 14-02-014 REV L ECN# 01-1000)
1
2Mb Ultra-Low Power Asynchronous CMOS SRAM
128K × 16bit
Overview
The N02L163WN1A is an integrated memory
device containing a 2 Mbit Static Random Access
Memory organized as 131,072 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with a single chip
enable (CE) control and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently. The N02L163WN1A is
optimal for various applications where low-power is
critical such as battery backup and hand-held
devices. The device can operate over a very wide
temperature range of -40
o
C to +85
o
C and is
available in JEDEC standard packages compatible
with other standard 128Kb x 16 SRAMs.
Features
Single Wide Power Supply Range
2.3 to 3.6 Volts
Very low standby current
2.0μA at 3.0V (Typical)
Very low operating current
2.0mA at 3.0V and 1μs (Typical)
Very low Page Mode operating current
0.8mA at 3.0V and 1μs (Typical)
Simple memory control
Single Chip Enable (CE)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
Low voltage data retention
Vcc = 1.8V
Very fast output enable access time
30ns OE access time
Automatic power down to standby mode
TTL compatible three-state output driver
Compact space saving BGA package avail-
able
Product Family
Part Number
Package Type
Operating
Temperature
Power
Supply
(Vcc)
Speed
Standby
Current (I
SB
),
Typical
Operating
Current (Icc),
Typical
N02L163WN1AB
48 - BGA
-40
o
C to +85
o
C 2.3V - 3.6V 70ns @ 2.3V
2
μ
A
2 mA @ 1MHz
N02L163WN1AT
44 - TSOP II
N02L163WN1AB1
48 - BGA Pb-Free
N02L163WN1AT2
44 - TSOP II Green
相關PDF資料 |
PDF描述 |
|---|---|
| N02L163WN1AT2-55I | 2Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N02L163WN1AB1 | 2Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N02L163WN1AB1-55I | 2Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N04L163WC1C | 4Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N1153 | 5 Bit Programmable Synchronous |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| N02L163WN1AT2-55I | 制造商:ON Semiconductor 功能描述:N02L163WN1A Series 2 Mbit ( 128 K X 16 ) Asynchronous CMOS SRAM - TSOP II-44 |
| N02L163WN1AT2-55ITR | 制造商:ON Semiconductor 功能描述:N02L163WN1A Series 2 Mbit ( 128 K X 16 ) Asynchronous CMOS SRAM - TSOP II-44 |
| N02L163WN1AT-55I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N02L6181A | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit |
| N02L6181AB27I | 功能描述:靜態(tài)隨機存取存儲器 2MB 1.8V LOW PWR 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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