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參數(shù)資料
| 型號(hào)： | N01L163WC2AT-55I |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 1Mb Ultra-Low Power Asynchronous CMOS SRAM |
| 中文描述： | 1MB的超低功耗CMOS SRAM的異步 |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大小： | 274K |
| 代理商： | N01L163WC2AT-55I |
NanoAmp Solutions, Inc.
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
N01L163WC2A
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
(DOC# 14-02-010 REV F ECN# 01-0996)
1
1Mb Ultra-Low Power Asynchronous CMOS SRAM
64K × 16 bit
Overview
The N01L163WC2A is an integrated memory
device containing a 1 Mbit Static Random Access
Memory organized as 65,536 words by 16 bits. The
device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with two chip enable
(CE1 and CE2) controls and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently and can also be used to
deselect the device. The N01L163WC2A is optimal
for various applications where low-power is critical
such as battery backup and hand-held devices.
The device can operate over a very wide
temperature range of -40
o
C to +85
o
C and is
available in JEDEC standard packages compatible
with other standard 64Kb x 16 SRAMs
Features
Single Wide Power Supply Range
2.3 to 3.6 Volts
Very low standby current
2.0μA at 3.0V (Typical)
Very low operating current
2.0mA at 3.0V and 1μs (Typical)
Very low Page Mode operating current
0.8mA at 3.0V and 1μs (Typical)
Simple memory control
Dual Chip Enables (CE1and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
Low voltage data retention
Vcc = 1.8V
Very fast output enable access time
30ns OE access time
Automatic power down to standby mode
TTL compatible three-state output driver
Compact space saving BGA package avail-
able
Product Family
Part Number
Package Type
Operating
Temperature
Power
Supply
(Vcc)
Speed
Standby
Current
(I
SB
), Typical
Operating
Current (Icc),
Typical
N01L163WC2AB
48 - BGA
-40
o
C to +85
o
C 2.3V - 3.6V 70ns @ 2.3V
2
μ
A
2 mA @ 1MHz
N01L163WC2AT
44 - TSOP II
N01L163WC2AB1
48 - BGA Pb-Free
N01L163WC2AT2
44 - TSOP II Green
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PDF描述 |
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| N01L163WC2AT2 | 1Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N01L163WC2AT2-55I | 1Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N01L163WN1A | 1Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N01L163WN1AB2-55I | 1Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N01L163WN1AB-55I | 1Mb Ultra-Low Power Asynchronous CMOS SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| N01L163WN1A | 制造商:NANOAMP 制造商全稱:NANOAMP 功能描述:1Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N01L163WN1AB2-55I | 制造商:ON Semiconductor 功能描述:N01L63WN1A Series 1Mbit ( 64 K X 16 ) Asynchronous CMOS SRAM - BGA-48 |
| N01L163WN1AB2-55I TR | 制造商:ON Semiconductor 功能描述:1MB, X16, 3V SRAM - Tape and Reel |
| N01L163WN1AB2-55ITR | 制造商:ON Semiconductor 功能描述:N01L63WN1A Series 1Mbit ( 64 K X 16 ) Asynchronous CMOS SRAM - BGA-48 |
| N01L163WN1AB-55I | 制造商:NANOAMP 制造商全稱:NANOAMP 功能描述:1Mb Ultra-Low Power Asynchronous CMOS SRAM |
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