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參數(shù)資料
| 型號： | N01L163WC2AB2-55I |
| 廠商： | NanoAmp Solutions, Inc. |
| 英文描述： | 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K 】 16 bit |
| 中文描述： | 2MB的超低功耗CMOS SRAM的異步128K的】16位 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 190K |
| 代理商： | N01L163WC2AB2-55I |
NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N02L163WC2A
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
(DOC# 14-02-013 REV G ECN# 01-1270)1
2Mb Ultra-Low Power Asynchronous CMOS SRAM
128K × 16 bit
Overview
The N02L163WC2A is an integrated memory
device containing a 2 Mbit Static Random Access
Memory organized as 131,072 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with two chip enable
(CE1 and CE2) controls and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently and can also be used to
deselect the device. The N02L163WC2A is optimal
for various applications where low-power is critical
such as battery backup and hand-held devices.
The device can operate over a very wide
temperature range of -40
o
C to +85
o
C and is
available in JEDEC standard packages compatible
with other standard 128Kb x 16 SRAMs
Features
Single Wide Power Supply Range
2.3 to 3.6 Volts
Very low standby current
2.0μA at 3.0V (Typical)
Very low operating current
2.0mA at 3.0V and 1μs (Typical)
Very low Page Mode operating current
0.8mA at 3.0V and 1μs (Typical)
Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
Low voltage data retention
Vcc = 1.8V
Very fast output enable access time
30ns OE access time
Automatic power down to standby mode
TTL compatible three-state output driver
Compact space saving BGA package avail-
able
Product Family
Part Number
Package Type
Operating
Temperature
Power
Supply
(Vcc)
Speed
Standby
Current
(I
SB
), Typical
Operating
Current (Icc),
Typical
N02L163WC2AB
48 - BGA
-40
o
C to +85
o
C 2.3V - 3.6V 70ns @ 2.3V
2
μ
A
2 mA @ 1MHz
N02L163WC2AT
44 - TSOP II
N02L163WC2AB2
48 - BGA Green
N02L163WC2AT2
44 - TSOP II Green
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| N01L163WC2A | 1Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N01L163WC2AB | 1Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N01L163WC2AB-55I | 1Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N01L163WC2AB1 | 1Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N01L163WC2AB1-55I | 1Mb Ultra-Low Power Asynchronous CMOS SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| N01L163WC2AB-55I | 制造商:NANOAMP 制造商全稱:NANOAMP 功能描述:2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K 】 16 bit |
| N01L163WC2AT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N01L163WC2AT2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N01L163WC2AT2-55I | 制造商:NANOAMP 制造商全稱:NANOAMP 功能描述:1Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N01L163WC2AT2-55I TR | 制造商:ON Semiconductor 功能描述:1MB, X16, 3V SRAM - Tape and Reel |
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