
1997 Feb 18
3
Philips Semiconductors
Product specification
NPN microwave power transistor
MZ0912B50Y
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Up to 0.2 mm from ceramic.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation (peak power)
storage temperature
operating junction temperature
soldering temperature
open emitter
open base
R
BE
= 0
open collector
t
p
≤
10
μ
s;
δ ≤
10%
T
mb
= 75
°
C; t
p
≤
10
μ
s;
δ ≤
10%
65
65
20
60
3
3
150
+200
200
235
V
V
V
V
A
W
°
C
°
C
°
C
t
≤
10 s; note 1
Fig.2 Power derating curve.
t
p
= 10
μ
s;
δ
= 10%; P
tot max
= 150 W.
handbook, halfpage
50
200
0
60
120
0
Ptot
(W)
100
Tmb (
°
C)
MGL051