參數(shù)資料
型號(hào)： MXPLAD15KP9.0CATR
廠商： MICROSEMI CORP-IRELAND
元件分類： TVS二極管 - 瞬態(tài)電壓抑制
英文描述： 15000 W, BIDIRECTIONAL, SILICON, TVS DIODE
封裝： PLASTIC PACKAGE-1
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 290K
代理商： MXPLAD15KP9.0CATR
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
6 Lake Street, Lawrence, MA 01841
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
RF01004 Rev A, June 2010
High Reliability Product Group
Page 1 of 4
DEVICES
MPLAD15KP7.0A thru MPLAD15KP200CA, e3
LEVELS
M, MA, MX, MXL
FEATURES
High reliability controlled devices with wafer fabrication and assembly lot traceability
100 % surge tested devices
Low profile surface mount
Optional up screening available by replacing the M prefix with MA, MX or MXL. These prefixes specify
various screening and conformance inspection options based on MIL-PRF-19500. Refer to MicroNote
129 for more details on the screening options
Suppresses transients up to 15,000 W @ 10/1000 s (see Figure 1)
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS compliant devices available by adding an “e3” suffix
3σ lot norm screening performed on Standby Current I
D
APPLICATIONS / BENEFITS
Protection from switching transients and induced RF
Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4
Secondary lightning protection per IEC 61000-4-5 with 42 Ohms source impedance:
o
Class 1,2,3,4,5: MPLAD15KP7.0A to 200CA
Secondary lightning protection per IEC 61000-4-5 with 12 Ohms source impedance:
o
Class 1,2,3,4: MPLAD15KP7.0A to 200CA
Secondary lightning protection per IEC 61000-4-5 with 2 Ohms source impedance:
o
Class 2,3: MPLAD15KP7.0A to 200CA
o
Class 4: MPLAD15KP5.0 to 54CA
Pin injection protection per RTCA/DO-160D for Waveform 4 (6.4/69 s):
o
Level 4: MPLAD15KP7.0A to 200CA
o
Level 5: MPLAD15KP7.0A to 100CA
Pin injection protection per RTCA/DO-160D for Waveform 5A (40/120 s):
o
Level 4: MPLAD15KP7.0A to 28CA
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25 °C:
15,000 watts at 10/1000 μs (also see Figures 1 and 2) with
impulse repetition rate (duty factor) of 0.05% or less
tclamping (0 volts to VBR min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional
Operating and Storage temperature: -55 °C to +150 °C
Thermal resistance: 0.2 °C/W junction to case or 50 °C/W junction to ambient when mounted on FR4 PC
board with recommended mounting pad (see page 2)
Steady-State Power dissipation: 50 watts at TC = 100 °C with good heat sink, or 2.5 watts at TA = 25 °C
if mounted on FR4 PC board as described for thermal resistance
Forward Surge Voltage: 3.5 V maximum @ 500 Amps 8.3 ms half-sine wave (unidirectional devices only)
Solder temperatures: 260 °C for 10 s (maximum)
SURFACE MOUNT 15,000 W
Transient Voltage Suppressor
- High Reliability controlled devices
- Unidirectional (A) and Bidirectional (CA) construction
- Selections for 7.0 to 200 V standoff voltages (VWM)
- Fast response
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