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參數(shù)資料
| 型號： | MXP4005 |
| 廠商： | MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP |
| 元件分類： | 光敏二極管 |
| 英文描述： | InGaAs/InP PIN Photo Diode |
| 中文描述： | PIN PHOTO DIODE |
| 封裝： | DIE-2 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 121K |
| 代理商： | MXP4005 |
Obsolete Product – not recommended for new design
Microsemi
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
Copyright
2001
Rev. 1.1
W
M
.
C
MXP4005 – 12.7 Gbps
InGaAs/InP PIN Photo Diode
O
P T O
- E
L E C T R O N I C
P
R O D U C T S
P
R O D U C T I O N
D
A T A
S
H E E T
C H A R A C T E R I S T I C S
Test conditions (unless otherwise noted): T
A
= 25
o
C, V
R
= 5 Volts
MXP4003
Typ
40
1.0
0.86
`
MAXIMUM RATINGS
Operating Junction Temperature Range
Storage Temperature Range
Maximum Soldering Temperature
`
ELECTRICAL CHARACTERISTICS
Active Area Diameter
Responsivity (1)
Parameter
Symbol
Test Conditions
Min
-20
-55
0.95
0.80
20
10
Max
+85
+125
+260
Units
T
J
T
STG
R
10 seconds maximum at temperature
o
C
o
C
o
C
μ
m
A/W
V
R
= 5V,
λ
= 1550nm
VR = 5V,
λ=
1310nm
VR = 5V @10mW input power
V
R
= 5V
I
R
= 10
μ
A
V
R
= 5V
V
R
= 5V,
λ
= 1550nm @3dB
Linearity (2)
Dark Current
Breakdown Voltage
Capacitance
Bandwidth
L
I
D
BV
R
C
BW
5
%
nA
Volts
pF
GHz
1.0
0.22
Note:
1. Antireflective coating is wavelength at 1430nm covering 1310 and 1550nm applications
2. Maximum distortion from nominal @ 10mW input power
P R E C A U T I O N S F O R U S E
ESD protection is important. Standard ESD protection procedures should be employed whenever handling InGaAs PIN photo diode.
E
L
E
C
T
R
I
C
A
L
S
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